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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
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| Part No. |
RFK25P08 RFH25P08 RFH25P10
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| OCR Text |
...istance junction to case symbol bvdss vgs(th) idss 'gss rds(on) vds(on) ld(on) v 'd(off) tf . ciss coss crss r8jc test conditions id = 250na, vgs = 0v vgs = vds. id = 250p,a, (fi9ure 8) vds = rated bvdss. vgs = 0 vds = -8 x rated bvdss. vgs... |
| Description |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
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| File Size |
87.04K /
2 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9564GM ADVANCEDPOWERELECTRONICSCORP-AP9564GM
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON)
G
-40V 28m -7.3A
ID
SO-8
S S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lo... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
68.63K /
4 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
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| Part No. |
IRF220 IRF223 IRF221 IRF222
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| OCR Text |
...to drain "miller" charge symbol bvdss vgs(th) toss 'd(on) 'gss rds(on) 9fs 'd(on) tr td(off) tf q9(tot) qgs qgd test conditions id = 250ua, vgs = ov, (figure 10) vds = vgs. id = 2^a vds = rated bvdss, vgs = ov vds = 0-8 x rated bvdss, vgs =... |
| Description |
Nanosecond Switching Speeds
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| File Size |
131.12K /
3 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
IRF323 IRF320
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| OCR Text |
...to drain "miller" charge symbol bvdss vgs(th) bss !d(on) 'gss rds(on) sfs 'd(on) tr ld(off) tf qg(tot) qgs qgd test conditions id = 250ua vgs = 0v, (figure 10) vgs = vds. id = 250na vds = rated bvdss, vgs = 0v vds = 0.8 x rated bvdss, vgs =... |
| Description |
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
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| File Size |
133.40K /
3 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9563J AP9563H
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
-40V 40m -26A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC conv... |
| Description |
P-CHANNEL ENHANCEMENT MODE
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| File Size |
70.25K /
4 Page |
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it Online |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9479GM
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
G
60V 45m 5.6A
Lower Gate Charge Fast Switching Characteristic
D
D D
SO-8
S
S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the bes... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
68.86K /
4 Page |
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it Online |
Download Datasheet |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9477GM
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
G
60V 90m 4A
Lower Gate Charge Fast Switching Characteristic
D
D D
SO-8
S
S
S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
68.26K /
4 Page |
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it Online |
Download Datasheet |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP9452GG
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
20V 50m 4A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
68.94K /
4 Page |
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it Online |
Download Datasheet |
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http://
A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP75T10S AP75T10P
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
100V 15m 72A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-eff... |
| Description |
N-CHANNEL ENHANCEMENT MODE
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| File Size |
106.02K /
4 Page |
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it Online |
Download Datasheet |
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A-POWER[Advanced Power Electronics Corp.]
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| Part No. |
AP4232GM
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| OCR Text |
...NHANCEMENT MODE POWER MOSFET
bvdss RDS(ON) ID
G2 S2
30V 22m 7.8A
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ult... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
71.09K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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