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NEC[NEC] NEC Corp.
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Part No. |
LD7126 LD7126SERIES
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OCR Text |
.................................. Body Voltage ................................................ Body Current ................................................ Collector Voltage ............................................. Collector Current ..... |
Description |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications 17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN 17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
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File Size |
76.98K /
6 Page |
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NEC[NEC]
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Part No. |
LD7111 LD7111SERIES
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OCR Text |
.................................. Body Voltage ................................................ Body Current ................................................ Collector Voltage ............................................. Collector Current ..... |
Description |
DBS-Band, 1.7KW Klystrons for Communications 17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN 17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
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File Size |
54.93K /
4 Page |
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NXP Semiconductors N.V. MACOM[Tyco Electronics]
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Part No. |
MA02203AD-R7 MA02203AD MA02203AD-R13
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OCR Text |
...RFOUT GND GND N/C 16 pin narrow body SOIC
Description
The MA02203AD is a two stage power amplifier designed for DECT applications to have an output power of +26.5 dBm with an input power of 2 dBm. This power amplifier operates at +3.6 v... |
Description |
3.6 V, 450 mW DECT RF Power Amplifier IC 3.6 V的,450毫瓦的DECT射频功率放大器IC 100mA Negative uCap LDO Regulator 3.6 V / 450 mW DECT RF Power Amplifier IC
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File Size |
88.18K /
5 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
L9669
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OCR Text |
... local functions for automotive body electronic applications connected to a CAN bus.
Figure 1. Block Diagram
KL30 (+12V) Voltage +5V Regulator VS 14 INH 1 VCC 10
5Vint
75k
WAKE
7 VCC
12.5k
Wake-up Control CANH Driver TXD C... |
Description |
FAULT TOLERANT CAN TRANSCEIVER
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File Size |
203.97K /
13 Page |
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Silikron Semiconductor ...
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Part No. |
SSF7N65F
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OCR Text |
...? f ast switching and reverse body recovery ? 150 operating temperature these n - channel enhancement mode power field effect transistors are produced using silikron proprietary mosfet technology. thi... |
Description |
Advanced Process Technology
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File Size |
466.48K /
8 Page |
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it Online |
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Price and Availability
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