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  8n-bit Datasheet PDF File

For 8n-bit Found Datasheets File :: 225    Search Time::1.437ms    
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    EF4442CMG_BZ63 EF4442PVZ63 EF4442 EF4442CMB_TZ63

ATMEL[ATMEL Corporation]
Part No. EF4442CMG_BZ63 EF4442PVZ63 EF4442 EF4442CMB_TZ63
OCR Text ...p detection time-delay will be (8n - 4) 4 period of clock O. 4 EF4442 2112A-HIREL-11/02 EF4442 Input Register This 32-bit shift register receives the data corresponding to the messages. The message received is transferred into t...
Description ARINC 429 Multi-channel Buffer Receiver (RTA) (N Channel/ Silicon Gate)
ARINC 429 Multi-channel Buffer Receiver (RTA) (N Channel Silicon Gate)
ARINC 429 MULTI-CHANNEL BUFFER RECEIVER (RTA) (N CHANNEL, SILICON GATE)

File Size 157.88K  /  21 Page

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    IS61DDB22M18-250M3 IS61DDB22M18 IS61DDB21M36-250M3

Integrated Silicon Solution, Inc
Part No. IS61DDB22M18-250M3 IS61DDB22M18 IS61DDB21M36-250M3
OCR Text ...ly. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IEEE 1149.1 test inputs (1.8V LVTTL levels). IEEE 11...bit linear; that is, when first address is A0+0, next internal burst address is A0+1. 2. Read refers...
Description 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs

File Size 549.55K  /  25 Page

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    IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3

Integrated Silicon Solution, Inc
Part No. IS61DDB42M18-250M3 IS61DDB42M18 IS61DDB41M36-250M3
OCR Text ...ly. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IEEE 1149.1 test inputs (1.8V LVTTL levels). IEEE 11...bit linear; that is, when first address is A0+0, next internal burst address is A0+1. 2. Read refers...
Description 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs

File Size 514.32K  /  26 Page

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    IS61QDB22M18-250M3 IS61QDB22M18-250M3L IS61QDB22M18 IS61QDB21M36-250M3 IS61QDB21M36-250M3L

Integrated Silicon Solution, Inc
Part No. IS61QDB22M18-250M3 IS61QDB22M18-250M3L IS61QDB22M18 IS61QDB21M36-250M3 IS61QDB21M36-250M3L
OCR Text ...ly. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IEEE 1149.1 test inputs (1.8V LVTTL levels). IEEE 11...bit linear; that is, when first address is A0+0, next internal burst address is A0+1. 2. Read refers...
Description 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs

File Size 495.96K  /  27 Page

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    IS61QDB42M18-200M3 IS61QDB41M36-200M3 IS61QDB41M36

Integrated Silicon Solution, Inc
Part No. IS61QDB42M18-200M3 IS61QDB41M36-200M3 IS61QDB41M36
OCR Text ...ly. 6K, 5L, 6L, 7L, 4M, 8M, 4N, 8N 11H 10R, 11R, 2R 1R Output driver impedance control. IEEE 1149.1 test inputs (1.8V LVTTL levels). IEEE 11...bit linear; that is, when first address is A0+0, next internal burst addresses are A0+1, A0+2, and A...
Description 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs

File Size 450.34K  /  28 Page

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    K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FC30 K7R323682C-FCI20 K7R32

SAMSUNG[Samsung semiconductor]
Part No. K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FC30 K7R323682C-FCI20 K7R323682C-FCI25 K7R323682C-FCI30 K7R323682C-FEC20 K7R323682C-FEC25
OCR Text ...,6F,6G,6H,6J,6K,5L-7L,4M, 8M,4N,8N 10R 11R 2R 1R 2A,3A,10A, DESCRIPTION Input Clock Input Clock for Output Data Output Echo Clock DLL Disabl...bit sequential for both read and write operations. Synchronous pipeline read and early write enable ...
Description 1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM

File Size 455.05K  /  20 Page

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    K7Q161864B K7Q161864B-FC16 K7Q163664B K7Q163664B-FC16

Samsung semiconductor
Part No. K7Q161864B K7Q161864B-FC16 K7Q163664B K7Q163664B-FC16
OCR Text ..., 6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N 10R 11R 2R 1R 3A,7A,1B,5B,9B,10B,1C,2C,6C,9C,1D,9D,10D, 1E,2E,9E,1F,9F,10F,1G,9G,10G,1H,1J,2J,9J,1K,2K, 9...bit sequential for both read and write operations, reguiring tow full clock bus cycles. Any request ...
Description 512Kx36 & 1Mx18 QDR TM b4 SRAM

File Size 341.45K  /  17 Page

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