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  860-900 Datasheet PDF File

For 860-900 Found Datasheets File :: 2137    Search Time::2.344ms    
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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ...4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2003 Fairchild Semiconductor Corporation ...900 RG = 25, L = 5mH, VCE = 960V 800 700 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200 TJ = 150...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to el...900 RG = 25, L = 5mH, VCE = 960V 800 700 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200 TJ = 150oC,...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text ...4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to el...900 RG = 25, L = 5mH, VCE = 960V 800 700 600 500 400 TJ = 25oC, VGE = 12V OR 15V 300 200 TJ = 150...
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 88.17K  /  7 Page

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    STM901-30 2879

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STM901-30 2879
OCR Text 860 .26 .I .P .GAI NEAR POWER AMPLIFIER - 900 MHz VOLTS NPUT/OUTPUT 50 OHMS OU T = +44.7 dBm PEP N = 35 dB MIN. CASE STYLEH141 ORDER CODE STM901-30 BRANDING STM901-30 PIN CONNECTION DESCRIPTION The STM901-30 module is designed f...
Description RF Power Module Linear Base Station Applications(用于线性基站的RF功率模块)
From old datasheet system

File Size 144.90K  /  8 Page

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    TP3032

Motorola Inc
Motorola, Inc
Part No. TP3032
OCR Text ...radation in Output Power f = 860 MHz f = 860 MHz Zin 980 980 ZOL* Zo = 10 VCE = 26 V f (MHz) 860 880 900 935 960 980 Zin () 2.9 - j0.4 2.9 - j0.9 2.9 - j1.45 3.2 - j0.95 3.25 - j1.5 3.55 - j1.1 Pout = 21 W ZOL* () 2 + j2.2 2.1 ...
Description RF POWER TRANSISTOR NPN SILICON

File Size 117.97K  /  4 Page

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    LET9060S

STMICROELECTRONICS[STMicroelectronics]
Part No. LET9060S
OCR Text ...ance G Zin S FREQ. MHz 860 880 900 920 940 960 ZIN () 0.65 - j 0.05 0.75 - j 0.6 0.9 - j 1.4 0.4 - j 1.3 0.4 - j 0.8 0.5 - j 1.6 ZDL() 2.0 + j 0.1 2.0 + j 0.1 1.4 + j 0.2 1.4 + j 0.5 1.2 + j 0.3 1.8 + j 1.0 ESD PROTECTION ...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

File Size 294.85K  /  10 Page

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    PTB20004

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20004
OCR Text 860-900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it...
Description 50 Watts, 860-900 MHz Cellular Radio RF Power Transistor
50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

File Size 46.81K  /  3 Page

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    PTB20005

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20005
OCR Text 860-900 MHz Cellular Radio RF Power Transistor Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it...
Description 15 Watts 860-900 MHz Cellular Radio RF Power Transistor
15 Watts, 860-900 MHz Cellular Radio RF Power Transistor
15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.10K  /  3 Page

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    PTB20006

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20006
OCR Text 860-900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it ...
Description 4 Watts, 86000 MHz Cellular Radio RF Power Transistor
4 Watts, 860-900 MHz Cellular Radio RF Power Transistor
4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.52K  /  3 Page

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    PTB20017

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20017
OCR Text 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum ...
Description 150 Watts, 86000 MHz Cellular Radio RF Power Transistor
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
150 Watts 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.06K  /  3 Page

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