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  8 03. Datasheet PDF File

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    Infineon
Part No. SPI100N03S2L-03
OCR Text ... smd version r ds(on) - - 2.8 2.5 3.7 3.4 m w drain-source on-state resistance v gs =10v, i d =80a v gs =10v, i d =80a, smd version...03 spp100n03s2l-03,spb100n03s2l-03 electrical characteristics parameter symbol conditions values uni...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 3mOhm, 100A, LL

File Size 526.93K  /  8 Page

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    Electronic Theatre Controls, Inc.
Part No. FY4AEJ-03
OCR Text ...hange. aug. 1999 5.0 0.4 1.27 1.8 max. 6.0 4.4 a ? ???? source gate drain a ? ?? ? ?? ?? v v a a a a a w c c g fy4aej-03 n-ch 30 20 4 28 4 1.7 6.8 1.6 p-ch C30 20 C4 C28 C4 C1.7 C6.8 1.6 C55~+150 C55~+150 0.07 4v drive v dss ............
Description FY4AEJ-03 FY4AEJ - 03

File Size 144.04K  /  9 Page

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    Microsemi
Part No. LXM1620-03 LXM1620-02
OCR Text ...ion with 2 lamps requiring only 8 watts. lamp current is fully regulated with respect to input voltage and output imped- ance variations. d...03 1 11861 w estern a venue , g arden g rove , ca. 92841, 714-898-8121, f ax : 714-893-2570 l i...
Description CCFL Inverter Module - Dual Lamp

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    Mitsubishi Electric Corporation
Part No. FS50UMJ-03
OCR Text ...6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 qwe q gate w drain e source r drain r d wr q e 4v drive v dss ..........03 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 30 1.0 ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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    Mitsubishi Electric Corporation
Part No. FS70UMJ-03
OCR Text ...6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 qwe q gate w drain e source r drain r d wr q e ? 4v drive ? v dss ........03 high-speed switching use v a ma v m ? m ? v s pf pf pf ns ns ns ns v c/w ns 30 1.0 ...
Description Power MOSFETs: FS Series, Low Voltage, 30V for High-Speed Switching Use

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    FS70SMJ-03

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS70SMJ-03
OCR Text ... 19.5MIN. 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr 4V DRIVE VDSS .............................................................03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS...
Description HIGH-SPEED SWITCHING USE

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    FS70SMJ-03

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS70SMJ-03
OCR Text ... 19.5MIN. 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr 4V DRIVE VDSS .............................................................03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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    SIEMENS AG
Part No. SPB80N03S2L-03 SPP80N03S2L-031
OCR Text ..., i d = 80 a r ds(on) - 3.1 3.8 m ? drain-source on-state resistance v gs = 10 v, i d = 80 a r ds(on) - 2.3 3.1 1 device on 40mm*40mm*...03 spb80n03s2l-03 preliminary data electrical characteristics , at t j = 25 c, unless otherwise sp...
Description OptiMOS Power-Transistor( MOS 型功率晶体管) 的OptiMOS功率晶体管(马鞍山型功率晶体管)

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    Cree, Inc.
Part No. LP476PPG1-90G-03 CREEINC.-LP476PPG1-90G-03
OCR Text ...9 v10 v11 v12 v13 v14 voltage 2.8-3.0 v 3.0-3.2 v 3.2-3.4 v 3.4-3.6 v 3.6-3.8 v 3.8-4.0 v 4.0-4.2 v 4.2-4.4 v important notes: all ranks wil...03 rev. no. 02 g g r r a a p p h h s s -60 -90 -30 30 0 0%0% 60 90 20%20% 40%40% 60%60% 50% power...
Description P4 LED 小的LED

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