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7.5amperes Datasheet PDF File

For 7.5amperes Found Datasheets File :: 14911 Search Time::5.031ms
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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.90 -50 GS = 10V 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5624 Rev A 1.0 0.5 0.0 -50 -25 0 25 50 75 ...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technolo...
Part No.	APT5010B2VR APT5010B2VRG
OCR Text	...Volts ns C 47 188 1.3 620 14.7 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) R...5 These dimensions are equal to the TO-247AD without mounting hole APT Reserves the right to chan...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
File Size	61.66K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-5037 Rev F 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.90 -50 GS = 10V 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5597 Rev B 1.0 0.5 0.0 -50 -25 0 25 50 75 ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...Volts ns C 44 176 1.3 620 14.7 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) R...5 0.1 0.2 0.05 0.1 0.05 PDM 0.01 0.005 Note: 0.02 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...Volts ns C 44 176 1.3 620 14.7 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) R...5 0.1 0.2 0.05 0.1 0.05 PDM 0.01 0.005 Note: 0.02 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...Volts ns C 44 176 1.3 620 14.7 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) R...5 0.1 0.2 0.05 0.1 0.05 PDM 0.01 0.005 Note: 0.02 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5010LLC APT5010B2LC APT5010B2LC-06
OCR Text	...PERES) 100 VGS= 10V & 15V 8V 7.5V 60 7V 40 6.5V 20 6V 5.5V 0 2 4 6 8 10 12 14 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 80 7.5V 80 60 7V 40 6.5V...
Description	47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
File Size	64.96K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVFR APT20M22LVFR
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.90 -50 GS = 10V 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5546 Rev C 1.0 0.5 0.0 -50 -25 0 25 50 75 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	66.12K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVR
OCR Text	...Volts ns C 47 188 1.3 620 14.7 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) R...5 0.1 0.05 0.2 0.1 0.05 0.02 0.005 0.01 SINGLE PULSE PDM 0.01 Note: t1 t2 Duty Factor D = t1...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	64.27K / 4 Page	View it Online	Download Datasheet

For 7.5amperes Found Datasheets File :: 14911 Search Time::5.031ms
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