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  5.8w ch Datasheet PDF File

For 5.8w ch Found Datasheets File :: 253    Search Time::2.922ms    
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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFK39V4045 K394045
OCR Text ...lly designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally impedance matched High output power P1dB=8W (TYP.) @f=14.0~14.5GHz High linear power g...
Description 14.0~14.5GHz BAND 8W INTERNALLY MATchD GaAs FET
From old datasheet system
14.0-14.5GHz BAND 8W INTERNALLY MATchD GaAs FET

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    Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07H0608M RA07H0608M-E01 RA07H0608M-01
OCR Text ... MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the d...8W (VGG control), Load VSWR=4:1 VDD=13.2V, Pin=30mW, Pout=7W (VGG control), Load VSWR=20:1 nd CO...
Description PTSE 12C 4#16,8#20 PIN PLUG 三菱射频MOSFET模块
PTSE 19C 19#20 SKT PLUG 三菱射频MOSFET模块
68 MHz - 88 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 30 X 10 MM, 5.40 MM HEIGHT, H46S, 4 PIN
MITSUBISHI RF MOSFET MODULE

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07M4047M RA07M4047M-E01 RA07M4047M-01
OCR Text ...G=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and contr...8W (VGG control), Load VSWR=4:1 VDD=9.2V, Pin=50mW, Pout=7W (VGG control), Load VSWR=20:1 nd CON...
Description 400-470MHz 7W 7.2V PORTABLE RADIO

File Size 59.04K  /  9 Page

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    RC5041M RC5041

Raytheon Company
Part No. RC5041M RC5041
OCR Text ...tion. 65-5041-01 Rev. 0.9.5 PRELIMINARY INFORMATION describes products that are not in full production at the time of printing. Spe...8W, 5%, SMT0805 10 Resistor, 1/8W, 5%, SMT0805 10 Resistor, 1/8W, 5%, SMT0805 10 Resistor, 1/8W, 5%,...
Description Programmable DC-DC Converter for Pentium P55C, K6 and 6x86MX (M2) Processors 可编程DC - DC转换为奔腾P55C,K6x86MX量(M2)处理器

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    RA07N4047M RA07N4047M-01 RA07N4047M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA07N4047M RA07N4047M-01 RA07N4047M-E01
OCR Text ...SCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. Th...8W (VGG control), Load VSWR=4:1 VDD=13.2V, Pin=20mW, Pout=7.5W (VGG control), Load VSWR=20:1 nd ...
Description MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块
30V N-channel PowerTrench MOSFET

File Size 61.24K  /  9 Page

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    RA07M4452M RA07M4452M-01 RA07M4452M-E01

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07M4452M RA07M4452M-01 RA07M4452M-E01
OCR Text ...G=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and contr...8W (VGG control), Load VSWR=4:1 VDD=9.2V, Pin=50mW, Pout=7W (VGG control), Load VSWR=20:1 nd CON...
Description 440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 61.05K  /  9 Page

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    RA07H3340M RA07H3340M-E01 RA07H3340M-01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07H3340M RA07H3340M-E01 RA07H3340M-01
OCR Text ... MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to 400-MHz range. The battery can be connected direc...8W (VGG control), Load VSWR=4:1 VDD=13.2V, Pin=20mW, Pout=7.0W (VGG control), Load VSWR=20:1 nd ...
Description MITSUBISHI RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO
From old datasheet system

File Size 61.64K  /  9 Page

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    RA08N1317M RA08N1317M-01 RA08N1317M-E01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA08N1317M RA08N1317M-01 RA08N1317M-E01
OCR Text ...G=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and contr...8W (VGG control), Load VSWR=4:1 VDD=13.2V, Pin=20mW, Pout=8W (VGG control), Load VSWR=20:1 nd CO...
Description Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
135-175MHz 8W 9.6V PORTABLE RADIO

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    IRG4BC15UD-L IRG4BC15UD-S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC15UD-L IRG4BC15UD-S
OCR Text ...2.56 2.21 --- -10 6.2 --- --- 1.5 1.4 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 2.4 IC = 7.8A VGE = 1...8W for typical PCB socket Mount 10.00 Load Current ( A ) 8.00 60% of rated voltage 6....
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) 绝缘栅双极型晶体管,超快软恢复二极管VCES和\u003d 600V电压的Vce(on)典\u003d 2.02V,@和VGE \u003d 15V的,集成电路\u003d 7.8A
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package

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