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  5.0volts Datasheet PDF File

For 5.0volts Found Datasheets File :: 42    Search Time::1.11ms    
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    TS075-06

Bothhand USA, LP.
Part No. TS075-06
OCR Text ...n. @50vdc 7.peak pulse rating 50volts b.electrical specifications @25 c: 1. ocl (open circuit inductance) 75uh+-20% @100khz, 50mvrms 2. (other ocl also available upon request) 3. et conseant 1.5v.us min 4. rise time 1.8 ns max ...
Description 10 BASE-T SMD ETHERNET TRANSFORMER

File Size 8.26K  /  1 Page

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    CRCW12062700FKEA CRCW12064R75FKEA ESME630ELL471MK25S 1812SMS--82NJL T491D106K035AT MRF6V2150N10 ATC100B102JT50XT 2743019

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
Part No. CRCW12062700FKEA CRCW12064R75FKEA ESME630ELL471MK25S 1812SMS--82NJL T491D106K035AT MRF6V2150N10 ATC100B102JT50XT 2743019447 ATC200B203KT50XT T494X226K035AT ATC100B750JT500XT ATC100B300JT500XT ATC100B330JT500XT ATC200B393KT50XT CDR33BX104AKYS C1812C224K5RAC
OCR Text ...w performance at 220 mhz: v dd =50volts,i dq = 450 ma, p out = 150 watts power gain ? 25 db drain efficiency ? 68.3% ? capable of handling 10:1 vswr, @ 50 vdc, 220 mhz, 150 watts cw output power features ? characterized with series equival ...
Description RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 1,491.11K  /  18 Page

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    CRCW12062700FKTA 1812SMS--82NJ T491D106K035AT 2743019447 MRF6V2300N10 ATC200B203KT50XT T494X226K035AT CRCW12064R75FKTA A

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
Part No. CRCW12062700FKTA 1812SMS--82NJ T491D106K035AT 2743019447 MRF6V2300N10 ATC200B203KT50XT T494X226K035AT CRCW12064R75FKTA ATC100B820JT500XT C1206C224Z5VAC ATC100B390JT500XT CDR33BX104AKYS ATC100B102JT50XT ATC200B103KT50XT MRF6V2300NBR1 MRF6V2300NBR5 MRF6V2300NR1 MRF6V2300NR5
OCR Text ...? typical cw performance: v dd =50volts,i dq = 900 ma, p out = 300 watts, f = 220 mhz power gain ? 25.5 db drain efficiency ? 68% ? capable of handling 10:1 vswr, @ 50 vdc, 220 mhz, 300 watts cw output power features ? characterized with se...
Description RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 1,183.85K  /  19 Page

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    MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Part No. MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6
OCR Text ...e performance at 450 mhz: v dd =50volts,i dq = 150 ma, p out = 1000 watts peak (200 w avg.), pulse width = 100 sec, duty cycle = 20% power gain ? 20 db drain efficiency ? 64% ? capable of handling 10:1 vswr @ 50 vdc, 450 mhz, 1000 watts pe...
Description RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 1,287.68K  /  19 Page

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    MRF6V4300NR110 MRF6V4300NBR1 COPPERWIRE T491B476M025AT C3225JB2A105KT C3225CH2A153JT C5750JF1H226ZT

Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
Part No. MRF6V4300NR110 MRF6V4300NBR1 COPPERWIRE T491B476M025AT C3225JB2A105KT C3225CH2A153JT C5750JF1H226ZT
OCR Text ...? typical cw performance: v dd =50volts,i dq = 900 ma, p out = 300 watts, f = 450 mhz power gain ? 22 db drain efficiency ? 60% ? capable of handling 10:1 vswr, @ 50 vdc, 450 mhz, 300 watts cw output power features ? characterized with seri...
Description RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 814.48K  /  15 Page

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    MMBD7000 MMBD7000-TP

Micro Commercial Components, Corp.
Part No. MMBD7000 MMBD7000-TP
OCR Text ... voltage i r 1.0 a 100 a v r =50volts t j = 25 c t j = 125 c maximum junction capacitance c j 2pf measured at 1.0mhz, v r =0v reverse recovery time t rr 4ns i f =10ma v r = 0v r l =500? *pulse test: pulse width 300 sec, duty...
Description 225mW 100Volt Dual Switching Diode
DIODE SW DUAL 100V 150MA SOT23 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 209.02K  /  3 Page

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    MRF6V2010N10

Freescale Semiconductor, Inc
Part No. MRF6V2010N10
OCR Text ...w performance at 220 mhz: v dd =50volts,i dq =30ma, p out = 10 watts power gain ? 23.9 db drain efficiency ? 62% ? capable of handling 10:1 vswr, @ 50 vdc, 220 mhz, 10 watts cw output power features ? characterized with series equival ent l...
Description RF Power Field Effect Transistors

File Size 1,668.13K  /  21 Page

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    Micro Commercial Components Corp.
MCC[Micro Commercial Components]
Part No. 1N277
OCR Text ... IFM = 100mA; TJ = 25C* VR = 50Volts TA = 75C Measured at 1.0MHz, VR=1V DIMENSIONS INCHES MIN --------.018 1.000 MM MIN --------0.46 25.40 *Pulse test: Pulse width 300 sec, Duty cycle 2% DIM A B C D MAX .300 .107 .022 ----- ...
Description 110 Volt Germanium Diode

File Size 65.01K  /  1 Page

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    MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUN

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUND HMK432B7225KM--T MCGPR100V477M16X32--RH ATC100B102KT50XT ATC100B150JT500XT C4532X7R1H685K ATC100B471JT200XT
OCR Text ...z. ? typical performance: v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) ? d (%) pulse (100 ? sec, 20% duty cycle) 1250 peak 230 24.0 74.0 cw 1250 cw 230 22.9 74.6 application circuits (1) ? typical performance frequenc...
Description RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
   RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

File Size 855.06K  /  23 Page

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    BAV7413

Micro Commercial Components
Part No. BAV7413
OCR Text ...mmercial components 1 of 3 v r =50volts ? lead free finish/rohs compliant ("p"suffix designates roh scompliant. see ordering information) b .083 .104 2.10 2.64 ? halogen free available upon request by adding suffix "-hf" ep...
Description 225mW 50 Volt Dual Switching Diode

File Size 301.93K  /  3 Page

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For 5.0volts Found Datasheets File :: 42    Search Time::1.11ms    
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