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  4.700v Datasheet PDF File

For 4.700v Found Datasheets File :: 2185    Search Time::3.844ms    
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    Silan Microelectronics
Part No. SVD2N70T SVD2N70F
OCR Text ...gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =1.0a -- 5.5 6.5 input capacitance c iss -- 310 -- output capacitance c oss -- 56 -- reverse transfer capacitanc...
Description 700V N-CHANNEL MOSFET

File Size 748.50K  /  9 Page

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    TSC148DCI TSC148DCZ TSC148D

Taiwan Semiconductor Company, Ltd
Part No. TSC148DCI TSC148DCZ TSC148D
OCR Text ...TSTG Limit 700V 400V 9 8 16 4 8 80 36 +150 -65 to +150 Unit V V V A A A A W W o o C C 1/6 Version: A07 TSC148D High Voltage Fast-Switching NPN Power Transistor Electrical Specifications (Ta = 25oC unless otherwise not...
Description High Voltage Fast-Switching NPN Power Transistor

File Size 316.58K  /  6 Page

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    Icemos Technology
Part No. ICE4N70FP
OCR Text ... current i d t c =25 o c 4 a pulsed drain current i d, pulse t c =25 o c 12 a avalanche energy, single pulse e as ...700v, v gs =0v, t j =25 o c - 0.1 1 a v ds =700v, v gs =0v, t j =150 o c - - ...
Description N-Channel Enhancement Mode MOSFET

File Size 518.42K  /  9 Page

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    TSC5301DCTB0 TSC5301DCTA3 TSC5301D

Taiwan Semiconductor Company, Ltd
Part No. TSC5301DCTB0 TSC5301DCTA3 TSC5301D
OCR Text ... 0.5 1.1 1.1 1.2 -30 -0.3 0.9 0.4 800 1.4 Unit V V V uA uA V V DC Current Gain Turn On Time Storage Time Fall Time uS uS uS uS V Diode Fall Time Forward Voltage Drop Notes: a. Pulsed duration = 300uS, duty cycle 2% 2/5 ...
Description High Voltage NPN Transistor with Diode

File Size 274.09K  /  5 Page

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    TSC5302D07 TSC5302D TSC5302DCH TSC5302DCP

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
Part No. TSC5302D07 TSC5302D TSC5302DCH TSC5302DCP
OCR Text ...J TSTG Limit 700V 400V 10 2 4 1 2 25 1.5 +150 -65 to +150 Unit V V V A A A A W o o C C 1/6 Version: A07 TSC5302D High Voltage NPN Transistor with Diode Thermal Performance Parameter Junction to Case Thermal Resistan...
Description    High Voltage NPN Transistor with Diode

File Size 303.24K  /  6 Page

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    SSF6NS70G

GOOD-ARK Electronics
Part No. SSF6NS70G
OCR Text ... for to-251/to-252 package 0.4 p d @tc = 25c linear derating factor for to-220f package 0.25 w/c v ds drain-source voltage 700 ...700v r ds (on) 1.2 (typ.) i d 5.2a to-251 ssf6ns70g schematic diagram ? high dv/d...
Description 700V N-Channel MOSFET

File Size 1,086.93K  /  9 Page

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    FSL137H FSL137HNY

Fairchild Semiconductor
Part No. FSL137H FSL137HNY
OCR Text ...t 230VAC 15% Adapter (3) (2) (4) 85-265VAC Adapter (3) Open Frame Open Frame (4) FSL137H 17.5W 25W 13W 19W Notes: 1. The m...700V, VGS = 0V VDS = 700V, VGS = 0V 700 0.5 1 4.00 315 47 9 11.2 34 28.2 32 50.0 V IDSS RDS...
Description Green Mode Fairchild Power Switch (FPS?
Green Mode Fairchild Power Switch (FPS垄芒)

File Size 532.05K  /  13 Page

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    NTE310P

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE310P
OCR Text .... . . . . . . . . . . . . . . . 4.5A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....700V, IGT = 50mA, tr = 0.1s), di/dt . . . . . . . . . 200A/s Peak Forward Gate Power (Negative Gate ...
Description Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace Switch

File Size 21.94K  /  2 Page

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    Micross Components
Part No. ICE4N70
OCR Text ...ons i d continous drain current 4 a t c = 25c i d , pulse pulsed drain current 12 a t c = 25c e as avalanche energy, single pulse 80 mj i ...700v min r ds(on) v gs = 10v 1.0? typ q g v ds = 480v 21nc typ micross components ltd, united king...
Description N-Channel Enhancement Mode MOSFET

File Size 754.63K  /  4 Page

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    Icemos Technology
Part No. ICE4N70
OCR Text ... current i d t c =25 o c 4 a pulsed drain current i d, pulse t c =25 o c 12 a avalanche energy, single pulse e as ...700v, v gs =0v, t j =25 o c - 0.1 1 a v ds =700v, v gs =0v, t j =150 o c - - ...
Description N-Channel Enhancement Mode MOSFET

File Size 552.75K  /  9 Page

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