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Silan Microelectronics
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Part No. |
SVD2N70T SVD2N70F
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OCR Text |
...gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =1.0a -- 5.5 6.5 input capacitance c iss -- 310 -- output capacitance c oss -- 56 -- reverse transfer capacitanc... |
Description |
700V N-CHANNEL MOSFET
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File Size |
748.50K /
9 Page |
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Icemos Technology
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Part No. |
ICE4N70FP
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OCR Text |
... current i d t c =25 o c 4 a pulsed drain current i d, pulse t c =25 o c 12 a avalanche energy, single pulse e as ...700v, v gs =0v, t j =25 o c - 0.1 1 a v ds =700v, v gs =0v, t j =150 o c - - ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
518.42K /
9 Page |
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it Online |
Download Datasheet
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Micross Components
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Part No. |
ICE4N70
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OCR Text |
...ons i d continous drain current 4 a t c = 25c i d , pulse pulsed drain current 12 a t c = 25c e as avalanche energy, single pulse 80 mj i ...700v min r ds(on) v gs = 10v 1.0? typ q g v ds = 480v 21nc typ micross components ltd, united king... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
754.63K /
4 Page |
View
it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE4N70
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OCR Text |
... current i d t c =25 o c 4 a pulsed drain current i d, pulse t c =25 o c 12 a avalanche energy, single pulse e as ...700v, v gs =0v, t j =25 o c - 0.1 1 a v ds =700v, v gs =0v, t j =150 o c - - ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
552.75K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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