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  4.300v Datasheet PDF File

For 4.300v Found Datasheets File :: 10670    Search Time::2.297ms    
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    FQA7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N60
OCR Text ...ed (Note 1) FQA7N60 600 7.7 4.8 30.8 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Vo...300V VDS = 480V Ciss 8 Capacitance [pF] 1200 Coss 6 800 Crss 400 Notes ...
Description 600V N-Channel MOSFET

File Size 579.46K  /  8 Page

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    FQB7N60 FQI7N60 FQI7N60TU FQB7N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB7N60 FQI7N60 FQI7N60TU FQB7N60TM
OCR Text ...e 1) FQB7N60 / FQI7N60 600 7.4 4.7 29.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Sourc...300V VDS = 480V Ciss 8 Capacitance [pF] 1200 Coss 6 800 Crss 400 Notes ...
Description    600V N-Channel MOSFET
600V N-Channel QFET

File Size 589.78K  /  9 Page

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    FQP7N60

Fairchild Semiconductor
Part No. FQP7N60
OCR Text ...lsed (Note 1) FQP7N60 600 7.4 4.7 29.6 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source ...300V VDS = 480V Ciss 8 Capacitance [pF] 1200 Coss 6 800 Crss 400 Notes ...
Description 600V N-Channel MOSFET

File Size 579.36K  /  8 Page

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    FQPF7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF7N60
OCR Text ... TM Features * * * * * * 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switch...300V VDS = 480V Ciss 8 Capacitance [pF] 1200 Coss 6 800 Crss 400 Notes ...
Description 600V N-Channel MOSFET

File Size 602.37K  /  8 Page

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    HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D
OCR Text ...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...300V IC = 7A, VCE = 300V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 140.21K  /  9 Page

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    HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4
OCR Text ...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...300V IC = 7A, VCE = 300V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time...
Description 600V, SMPS Series N-Channel IGBT 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
600V SMPS Series N-Channel IGBT

File Size 153.85K  /  8 Page

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    HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826
OCR Text ...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...300V IC = 7A, VCE = 300V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time...
Description From old datasheet system
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT

File Size 166.85K  /  11 Page

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    IRF737LC

IRF[International Rectifier]
Part No. IRF737LC
OCR Text ...6.1 3.9 24 74 0.59 30 120 6.1 7.4 3.4 -55 to + 150 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Re...300V, VGS = 0V A 250 VDS = 240V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 17 ID = 6.1A 4...
Description 300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET?? Power MOSFET

File Size 144.10K  /  8 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...TO-247AC Max. 27 18 110 500 4.0 30 13 -55 to + 150 300 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Avalanche Characteristics S...300V --- ID = 27A ns --- RG = 4.3 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1....
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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