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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
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| Part No. |
HGTG30N60B3D HGT4E30N60B3DS
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| OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC TC = 25oC = 150oC = 25oC = 150o... |
| Description |
60A/ 600V/ UFS Series N-Channel IGBT
60A 600V UFS Series N-Channel IGBT
60A, 600V, UFS Series N-Channel IGBT
2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN
CONNECTOR ACCESSORY 60 A, 600 V, N-CHANNEL IGBT, TO-268AA
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| File Size |
174.29K /
8 Page |
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it Online |
Download Datasheet
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGTG30N60C3D FN4041
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| OCR Text |
...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES VCE = BV... |
| Description |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
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| File Size |
115.87K /
7 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STQ1NC45R
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| OCR Text |
... charge gate-drain charge v dd =360v,i d = 1.5 a, v gs =10v,r g = 4.7 w 7 1.3 3.2 10 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 360v, i d = 1.5 a, r... |
| Description |
N-CHANNEL 450V 4.1OHM 1.5A IPAK/TO-92 SUPERMESH POWER MOSFET
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| File Size |
522.52K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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