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3-300s Datasheet PDF File

For 3-300s Found Datasheets File :: 11767 Search Time::3.297ms
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				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...or 10 seconds Max. 17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Ther...300s; duty cycle 2%. Uses IRF530N data and test conditions Starting TJ = 25C, L = 3.1mH RG =...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...S 20V P-Ch -20V 2 7 3 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Absolute Max...300s; duty cycle 2%. 70 N-Channel 100 IRF7106 100 I , Drain-to-Source Current (A) D ...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 320 8.0 13.4 3.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage ...300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semico...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	... 10 seconds Max. 8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A W W W/C V mJ A mJ V/ns C Th...300s; duty cycle 2%. Uses IRF840LC data and test conditions Starting TJ = 25C, L = 14mH RG =...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	...TURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060)...300s, 2% 2) @ VDD = -25V , L 2.3mH , RG = 25 , Peak IL = -18A , Starting TJ = 25C 3) @ ISD -18A ...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanc...300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	... A A D D D D VDSS = 30V 3 6 4 5 RDS(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile/s...300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF9410 100 VGS 15V 10V 7.0V...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	... seconds Max. -6.8 -4.8 -27 3.8 48 0.32 20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C ...300s; duty cycle 2% Uses IRF9520N data and test conditions Starting TJ = 25C, L = 18mH RG = ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... Typ. --- 0.50 --- Max. 3.1 --- 62 Units C/W 5/13/98 IRF9520N Electrical Characteristics @ TJ = 25C (unless otherwise spe...300s; duty cycle 2%. IRF9520N 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Sour...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	3 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified le...300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

For 3-300s Found Datasheets File :: 11767 Search Time::3.297ms
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