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  200a 1200 Datasheet PDF File

For 200a 1200 Found Datasheets File :: 2150    Search Time::0.954ms    
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    TM200CZ-24 TM200CZ-2H TM200CZ-H TM200CZ-M TM200DZ-24 TM200DZ-2H TM200DZ-H TM200DZ-M TM200PZ-24 TM200PZ-2H TM200PZ-H TM20

Mitsubishi Electric Semicon...
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM200CZ-24 TM200CZ-2H TM200CZ-H TM200CZ-M TM200DZ-24 TM200DZ-2H TM200DZ-H TM200DZ-M TM200PZ-24 TM200PZ-2H TM200PZ-H TM200PZ-M
OCR Text ...age on-state current .......... 200a Repetitive peak reverse voltage ........ 400/800/1200/1600V VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No....
Description CONNECTOR ACCESSORY 连接器附
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
314 A, 1600 V, SCR

File Size 59.48K  /  4 Page

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    TM200EZ-24 TM200EZ-2H TM200EZ-H TM200EZ-M TM200GZ-24 TM200GZ-2H TM200GZ-H TM200GZ-M TM200RZ-24 TM200RZ-2H TM200RZ-H TM20

Mitsubishi Electric Sem...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Semicon...
Part No. TM200EZ-24 TM200EZ-2H TM200EZ-H TM200EZ-M TM200GZ-24 TM200GZ-2H TM200GZ-H TM200GZ-M TM200RZ-24 TM200RZ-2H TM200RZ-H TM200RZ-M
OCR Text ...age on-state current .......... 200a Average forward current .......... 200a Repetitive peak reverse voltage .......... 400/800/1200/1600V VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V MIX DOUBLE ARMS Insulated Type U...
Description HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor

File Size 61.17K  /  4 Page

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    TMPN3120FE3M TMPN3120FE3U

Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
Part No. TMPN3120FE3M TMPN3120FE3U
OCR Text ...mperature range at VDD = 5.5 V. 200a ( typ. ) to 600A ( max ) is added to the current of the differential receiver when the receiver is enabled. The differential receiver is enabled by either of the following conditions : When the Neuron c...
Description TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 东芝的CMOS数字集成电路硅单
Neuron ?Chip For Distributed Intelligent Control Networks (LONWORKS ?)

File Size 209.70K  /  12 Page

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    50MT060ULS 50MT060ULST

IRF[International Rectifier]
Part No. 50MT060ULS 50MT060ULST
OCR Text ...5V, I C = 100A, TJ = 150C 0.5mA 200a = VGE , IC = 500A V GE V GE V GE IC = IR = mV/C V CE S mA V nA V GE(th) B VR V GE(th)/ T J g fe I CE...1200 di(rec)M/dt - (A/s) VR = 480V TJ = 125C TJ = 25C 100 200 300 400 500 600 Q rr - (nC) ...
Description 600V UltraFast 4-20 kHz Ls Chop S IGBT in a MTP package
LOW SIDE CHOPPER IGBT MTP

File Size 197.34K  /  10 Page

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    GA200TD120U

IRF[International Rectifier]
Part No. GA200TD120U
OCR Text 200a "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies ...1200 200 400 400 400 20 2500 1040 540 -40 to +150 -40 to +125 Units V A V W C Thermal / Me...
Description HALF-BRIDGE IGBT DOUBLE INT-A-PAK

File Size 295.85K  /  10 Page

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    HFA06TB120 HFB06TB120

IRF[International Rectifier]
Part No. HFA06TB120 HFB06TB120
OCR Text ... Conditions IF = 1.0A, dif/dt = 200a/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C dif/dt = 200a/s...1200 1400 Reverse Voltage - VR (V) 100 1 T = 150C J T = 125C J T = 25C J Junction Capac...
Description Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode
1200V 6A HEXFRED Discrete Diode in a TO-220AC package

File Size 149.00K  /  7 Page

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    HFA08TB120 HFB08TB120

IRF[International Rectifier]
Part No. HFA08TB120 HFB08TB120
OCR Text ...Conditions IF = 1.0A, dif/dt = 200a/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 8.0A VR = ...1200 Reverse Voltage - VR (V) Fig. 2 - Typ. Values Of Reverse Current Vs. Reverse Voltage T = 150C...
Description 1200V 8A HEXFRED Discrete Diode in a TO-220AC package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode

File Size 129.16K  /  7 Page

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    HFA16TB120

IRF[International Rectifier]
Part No. HFA16TB120
OCR Text ...Conditions IF = 1.0A, dif/dt = 200a/s, VR = 30V TJ = 25C TJ = 125C IF = 16A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200a/s...1200 10 0.01 T = 150C J T = 125C J T = 25C J Reverse Current - VR (V) Fig. 2 - Typical ...
Description Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode

File Size 130.09K  /  6 Page

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    NTE2986 NTE2985

NTE[NTE Electronics]
Part No. NTE2986 NTE2985
OCR Text .... . . . . . . . . . . . . . . . 200a Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....1200 200 Max - Unit V V(BR)DSS/ Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS...
Description Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 26.52K  /  3 Page

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    PST592 PST591 PST593 PST594 PST595 PST591F PST591FM PST595HM PST595H

MITSUMI[MITSUMI ELECTRIC]
Mitsumi Electronics, Corp.
Part No. PST592 PST591 PST593 PST594 PST595 PST591F PST591FM PST595HM PST595H
OCR Text .... 50mV typ. ICCL=300A typ. ICCH=200a typ. PST591 50mS PST592 100mS PST593 200mS C : 4.5V typ. D : 4.2V typ. E : 3.9V typ. F : 3.6V typ. G : ...1200 Max. Unit 4.7 4.4 4.1 3.8 3.5 V 3.3 3.05 2.85 2.65 100 mV %/C V A A A Symbol Measuring circu...
Description System Reset Monolithic IC PST591~595 Series

File Size 130.67K  /  6 Page

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