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For 1current Found Datasheets File :: 121 Search Time::2.468ms
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				Infineon Technologies AG
Part No.	BTS247Z BTS247-Z
OCR Text	...matic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175C 2 2000-05-17 ID = 12 A, RGS = 25 VGS = 4.5 V, VDS 0.5 V, TC = 85 C ID ID puls EAS Ptot Tj T...
Description	Smart Low Side Switches - N-Channel Speed TEMPFET Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics) Transient Voltage Suppressor Diodes
File Size	270.10K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPB100N06S2-05 SPP100N06S2-05
OCR Text	...GS=10V, I D=80A, SMD version 1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 170A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s...
Description	Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm OptiMOS Power-Transistor
File Size	312.35K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	SPD30N03S2L-07
OCR Text	...esistance V GS=10V, I D=30A 1current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s...
Description	Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.7mOhm, 30A, LL OptiMOS Power-Transistor
File Size	259.62K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N03S2L-10
OCR Text	...resistance V GS=10V, I D=30 1current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 76A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	OptiMOS Power-Transistor Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
File Size	255.84K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N03S2L-20
OCR Text	...esistance V GS=10V, I D=18A 1current limited by bondwire ; with an RthJC = 2.5K/W the chip is able to carry ID= 43A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL OptiMOS Power-Transistor
File Size	261.11K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N06S2-15 2N0615
OCR Text	...esistance V GS=10V, I D=30A 1current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 67A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	From old datasheet system OptiMOS Power-Transistor Published by Low Voltage MOSFETs - DPAK; 30 A; 55V; NL; 14,7 mOhm
File Size	265.06K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N06S2-23 N06S2-23
OCR Text	...esistance V GS=10V, I D=21A 1current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 46A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	Low Voltage MOSFETs - DPAK; 30 A; 55V; NL; 23 mOhm OptiMOS Power-Transistor
File Size	260.56K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N06S2L-13
OCR Text	...esistance V GS=10V, I D=30A 1current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 71A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	Low Voltage MOSFETs - DPAK; 30 A; 55V; LL; 13mOhm OptiMOS Power-Transistor
File Size	264.40K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N06S2L-23
OCR Text	...esistance V GS=10V, I D=22A 1current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry ID= 46A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	Low Voltage MOSFETs - DPAK; 30 A; 55V; LL; 23 mOhm OptiMOS Power-Transistor
File Size	262.95K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPD30N08S2-22
OCR Text	...esistance V GS=10V, I D=25A 1current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 52A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su...
Description	OptiMOS Power-Transistor Low Voltage MOSFETs - DPAK; 30 A; 75V; NL; 21,5 mOhm
File Size	264.75K / 8 Page	View it Online	Download Datasheet

For 1current Found Datasheets File :: 121 Search Time::2.468ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |