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  19.6mm Datasheet PDF File

For 19.6mm Found Datasheets File :: 6784    Search Time::2.047ms    
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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...0 V GS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 V GS = -10V, See Fig. 6 and 13 --- VDD = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...4 .40 (.9 61 ) 3 3 0.4 0 (1 .19 7) MA X . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Vic...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...ature, for 10 seconds Max. -19 -14 -68 3.8 68 0.45 20 180 -10 6.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounte...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ...que, 6-32 or M3 screw Max. -19 -14 -68 68 0.45 20 180 -10 6.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, F...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM

MAXIM[Maxim Integrated Products]
Part No. MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM
OCR Text 19-3280; Rev 2; 8/04 KIT ATION EVALU LE B AVAILA 10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports Genera...6mm x 6mm) (derate 26.3mW/C above +70C) ......................2105.3mW 48-Pin Thin QFN (7mm x 7mm) (...
Description 10-Bit Multichannel ADCs/DACs with FIFO Temperature Sensing and GPIO Ports
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports

File Size 1,321.21K  /  47 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX2320 MAX2320EUP MAX2321 MAX2321EUP MAX2322 MAX2322EUP MAX2324 MAX2324EUP MAX2325 MAX2326 MAX2326EUP MAX2327 MAX2327EUP MAX2329 MAX2323
OCR Text 19-1535; Rev 1; 6/00 L MANUA ION KIT ALUAT DATA SHEET EV WS FOLLO Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs Features ...6mm x 6.3mm RLNA 3 LNAINH 4 LNAINL 5 BAND 6 LIN 7 GAIN 8 LOLIN 9 LOHIN 10 MAX2320 MAX2321 MAX2...
Description Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
Adjustable / High-Linearity / SiGe Dual-Band LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...GE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-em...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    TLP521-2 TLP521-2GB TLP521-2X TLP521-2XGB TLP521-4GB TLP521-4X TLP521-4XGB TLP521GB TLP521X TLP521XGB TLP521-4 TLP521

ISOCOM
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. TLP521-2 TLP521-2GB TLP521-2X TLP521-2XGB TLP521-4GB TLP521-4X TLP521-4XGB TLP521GB TLP521X TLP521XGB TLP521-4 TLP521
OCR Text ...21-4 2.54 7.62 1.2 20.32 19.32 4.0 3.0 0.5 0.5 3.35 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25...6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA ...
Description Fasteners, Washer Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 高密度安装光电晶体管的光耦合隔离
HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS 高密度安装光电晶体管的光耦合隔离

File Size 73.43K  /  3 Page

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    HUF76112SK8 FN4834

INTERSIL[Intersil Corporation]
Part No. HUF76112SK8 FN4834
OCR Text ...A, Ig(REF) = 1.0mA (Figures 14, 19, 20) 15 7.2 0.74 2.1 2.9 18 8.7 0.9 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID = 7.5A VGS = 10V, RGS = 20 (Figures 16, 21, 22) 7.2 43 52 45 75 145 ns ns ns ns ns ns Source to Drain Diode...
Description From old datasheet system
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

File Size 183.81K  /  12 Page

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    HUF76132SK8 HUF76132SK8T

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76132SK8 HUF76132SK8T
OCR Text ....5 Ig(REF) = 1.0mA (Figures 14, 19, 20) 43 24 1.63 4 10 52 29 1.95 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 15V, ID 11.5A, RL = 1.3, VGS = 10V, RGS = 6.8 (Figures 16, 21, 22) 10 36 65 37 70 155 ns ns ns ns ns ns TA = 25oC, Unless...
Description 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

File Size 259.00K  /  12 Page

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