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    ADXL202AE ADXL202E ADXL202JE ADXL202EB-232 ADXL202JQC-1-REEL ADXL202AQC-1 ADXL202E-15

AD[Analog Devices]
http://
Part No. ADXL202AE ADXL202E ADXL202JE ADXL202EB-232 ADXL202JQC-1-REEL ADXL202AQC-1 ADXL202E-15
OCR Text ...ce Characteristics* VDD = 3 V 16 14 12 PERCENT OF PARTS PERCENT OF PARTS VDD = 5 V 18 16 14 12 10 8 6 4 2 0 2.05 2.14 2.23 2.31 2.40 ...312.5 2500 1250 625 4.0 8.0 16.0 0.8 1.6 3.2 0.4 0.8 1.6 A DUAL AXIS TILT SENSOR: CONVERTING ACCE...
Description Low-Cost 2 g Dual-Axis Accelerometer with Duty Cycle Output
±2 g Dual Axis Accelerometer
Low-Cost -2 g Dual-Axis Accelerometer with Duty Cycle Output

File Size 144.21K  /  12 Page

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    ADXL202 ADXL202AQC ADXL202JQC ADXL210 ADXL210AQC ADXL210JQC ADXL210JQC-1

Analog Devices, Inc.
AD[Analog Devices]
http://
Part No. ADXL202 ADXL202AQC ADXL202JQC ADXL210 ADXL210AQC ADXL210JQC ADXL210JQC-1
OCR Text ...5 VDC PERCENTAGE OF SAMPLES 100 16 14 12 10 8 6 4 2 -20 0 20 40 60 80 0 -0.87g -0.64g -0.41g -0.17g 0.06g 0.29g g/DUTY CYCLE OUTPUT 0.52g 0....312.5 2500 1250 625 4.0 8.0 16.0 0.8 1.6 3.2 0.4 0.8 1.6 () () Nominal Peak-to-Peak Value 2...
Description Low Cost 62 g/610 g Dual Axis Accelerometers with Digital Output(124.95 k)
Circular Connector; No. of Contacts:26; Series:LJTPQ00R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle
Low Cost -2 g/ -10 g Dual Axis iMEMS Accelerometers with Digital Output

File Size 124.81K  /  11 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ... Amps 500 47 188 30 40 520 4.16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissi...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drai...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ... Amps 500 47 188 30 40 520 4.16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissi...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-D...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ... 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTER...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ... 7410 1050 390 312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ... 7410 1050 390 312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ... 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARA...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ... Amps 500 47 188 30 40 520 4.16 -55 to 150 300 47 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Volt...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drai...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVR
OCR Text ... Amps 500 47 188 30 40 520 4.16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissi...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-D...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 64.27K  /  4 Page

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