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  125-600a Datasheet PDF File

For 125-600a Found Datasheets File :: 1103    Search Time::2.453ms    
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    LTC1326 LTC1326-2.5 LTC1326C LTC1326C-2.5 LTC1326CMS8 LTC1326CMS8-2.5 LTC1326CS8 LTC1326CS8-2.5 LTC1326I LTC1326I-2.5 LT

LINER[Linear Technology]
Part No. LTC1326 LTC1326-2.5 LTC1326C LTC1326C-2.5 LTC1326CMS8 LTC1326CMS8-2.5 LTC1326CS8 LTC1326CS8-2.5 LTC1326I LTC1326I-2.5 LTC1326IS8 LTC1326IS8-2.5 132625F
OCR Text ..., VRT25 (V) 2.370 3.130 3.125 3.120 3.115 3.110 3.105 3.100 - 60 - 40 - 20 VCCA THRESHOLD VOLTAGE, VRTA (V) VCC3 THRESHOLD VOLTAGE, VRT3 (V) 2.365 2.360 2.355 2.350 - 60 - 40 - 20 0 20 40 60 TEMPERATURE (C) Reset ...
Description From old datasheet system
Micropower Precision Triple Supply Monitors

File Size 303.14K  /  16 Page

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    SE564N NE564 NE564D NE564N SE564

NXP Semiconductors N.V.
Philips Semiconductors
Part No. SE564N NE564 NE564D NE564N SE564
OCR Text ... 14 6 11 1 600 0 to +70 -55 to +125 -65 to +150 UNITS V V mA mA mW IOUT IBIAS PD TA C C C DC AND AC ELECTRICAL CHARACTERISTICS VCC...600A FREQUENCY: 50MHz 1.10 1.05 1.00 0.95 0.90 BIAS CURRENT: -- 200A FREQUENCY: 5MHz 1.0...
Description Phase-locked loop PHASE LOCKED LOOP, 50 MHz, PDSO16

File Size 146.17K  /  9 Page

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    CA3193 CA3193AE CA3193E

Intersil, Corp.
Intersil Corporation
Part No. CA3193 CA3193AE CA3193E
OCR Text ...1.5 115 1.78 130 0.316 13.5 115 125 20 83 1.18 20 10 3.16 10 - nA nA nA/oC VP-P nV/Hz nV/Hz nV/Hz nV/Hz nV/Hz pAP-P pA/Hz pA/Hz pA/Hz ...600A 7 V+ 2 1 5 4 V- OFFSET NULL 63 CA3193, CA3193A Schematic Diagrams 7 V+ Q7...
Description 1.2MHz, BiCMOSPrecision OperationalAmplifiers OP-AMP, 380 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP8
1.2MHz,BiCMOSPrecision OperationalAmplifiers

File Size 480.13K  /  11 Page

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    DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60

Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
Dynex Semiconductor, Ltd.
Part No. DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
OCR Text ... -55 10.8 0.064 0.008 0.016 135 125 13.2 o Min. dc Anode dc - Max. 0.032 0.064 Units o C/W o C/W C/W C/W C/W o o ...600A peak, Tcase = 25oC At VRRM, Tcase = 125oC Typ. 6.0 350 1.7 Max. 3.8 70 1000 1.5 2.9 400 Units V...
Description Fast Recovery Diode
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 400 A, 5600 V, SILICON, RECTIFIER DIODE

File Size 48.34K  /  6 Page

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    TIP147F TIP145F TIP146F TIP147FTU

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. TIP147F TIP145F TIP146F TIP147FTU
OCR Text ... 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B, Decemb...
Description PNP Epitaxial Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors

File Size 59.84K  /  4 Page

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    IRFR9214 IRFU9214 IRFRU9214

IRF[International Rectifier]
Part No. IRFR9214 IRFU9214 IRFRU9214
OCR Text ... 0.5 VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 S...
Description -250V Single P-Channel HEXFET Power MOSFET in a I-Pak package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)
HA1L-M1C53-G L6 Ovrsz ILL PB Rnd Flsh Mom SPDT 12V LED Sldr

File Size 103.22K  /  10 Page

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    DG306AE25

DYNEX[Dynex Semiconductor]
N.A.
Part No. DG306AE25
OCR Text ... 5.0 Max. 0.075 0.12 0.20 0.018 125 125 6.0 Units o C/W C/W C/W C/W o o o o C C o kN 2/19 DG306AE25 CHARACTERI...600A, VDM = 2000V Snubber Cap Cs = 1.0F, diGQ/dt = 15A/s Parameter Conditions At 600A peak, IG(ON) =...
Description Gate Turn-off Thyristor

File Size 216.65K  /  19 Page

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    LX5212 LX5212CDP LX5212CN LX5212CPWP

MICROSEMI[Microsemi Corporation]
Part No. LX5212 LX5212CDP LX5212CN LX5212CPWP
OCR Text ... 5 VTERM Units V V V F C 125 ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply over the operating ambient temperature range of 0C T A 70C. TermPwr = 4.75V, Disconnect = 0V. Low duty cycle pulse ...
Description SCSI - Single Ended
9-LINE LOW CAPACITANCE/ POWER SCSI TERMINATOR
9-LINE LOW CAPACITANCE, POWER SCSI TERMINATOR
9-LINE LOW CAPACITANCE, レPOWER SCSI TERMINATOR
9-LINE LOW CAPACITANCE, μPOWER SCSI TERMINATOR

File Size 149.11K  /  4 Page

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    QM1000HA-24B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM1000HA-24B
OCR Text ...000 7000 50 10000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~...600A 1 Tj=25C Tj=125C IC=800A 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 VCC=600V IB1=...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 62.10K  /  5 Page

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    QM1000HA-2HB

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM1000HA-2HB
OCR Text ...000 7000 50 10000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.85~10.8 90~110 1.96~2.94 20~30 0.98~...600A 1 Tj=25C Tj=125C IC=800A 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 VCC=600V IB1=...
Description 1 A, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型

File Size 71.36K  /  5 Page

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