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  11ns Datasheet PDF File

For 11ns Found Datasheets File :: 181    Search Time::1.375ms    
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    ST Microelectronics
Part No. TSA1005-20IF TSA1005-20IFT TSA1005-40IFT
OCR Text ...b to digital output valid data 11ns toff rising edge of oeb to digital output tri-state 11ns 1 preliminary data. tsa1005 3/22 timing diagram: absolute maximum ratings n-1 n n+1 n+6 n+7 n+2 n+5 n+3 n+4 n+8 clk tpd i + tod n+9 n+10...
Description DUAL CHANNEL, 10 BIT, 20/40MSPS A/D CONVERTER

File Size 431.40K  /  22 Page

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    Taiwan Memory Technolog...
TM Technology, Inc.
Part No. T35L3232B-4T T35L3232B-3.8Q TMTECHNOLOGYINC.-T35L3232B-3.8Q T35L3232B
OCR Text ... - flow - through ? 9 / 10 / 11ns ?e single 3.3v +0.3v/ - 0.165v power supply ?e common data inputs and data outputs ?e individual byte write enable and global write control ?e three chip enables for depth expansion and address pipe...
Description 32K x 32 SRAM

File Size 264.25K  /  19 Page

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    MT55L256L32F MT55L512L18F

Micron Technology
Part No. MT55L256L32F MT55L512L18F
OCR Text ...ation  fast cycle times: 10ns, 11ns and 12ns  single +3.3v 5% power supply (v dd )  separate +3.3v or +2.5v isolated output buffer supply (v dd q)  advanced control logic for minimum control signal interface  individual byte write cont...
Description (MT55LxxxLxxF) 8Mb SRAM

File Size 316.66K  /  25 Page

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    AS5SS128K36DQ-11/IT AS5SS128K36DQ-11/XT AS5SS128K36DQ-11IT

Austin Semiconductor
Part No. AS5SS128K36DQ-11/IT AS5SS128K36DQ-11/XT AS5SS128K36DQ-11IT
OCR Text ...utilization ? fast cycle times: 11ns & 12ns ? single +3.3v +5% power supply (v dd ) ? advanced control logic for minimum control signal interface ? individual byte write controls may be tied low ? single r/w\ (read/write) control pin ? cke...
Description 128K x 36 SSRAM - synchronous ZBL SRAM flow-thru output
128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT

File Size 145.27K  /  16 Page

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    MAXIM[Maxim Integrated Products]
Part No. MAX8552 MAX8552EUB MAX8552ETB
OCR Text ...only 12ns propagation delay and 11ns (typ) rise and fall times, making the MAX8552 ideal for high-frequency applications. User-programmable break-before-make circuitry prevents shoot-through currents, maximizing converter efficiency. An ena...
Description High-Speed, Wide-Input, Single-Phase MOSFET Driver
High-Speed Wide-Input Single-Phase MOSFET Driver

File Size 211.76K  /  11 Page

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    T35L3232B T35L3232B-3.8Q T35L3232B-4T

TMT[Taiwan Memory Technology]
Part No. T35L3232B T35L3232B-3.8Q T35L3232B-4T
OCR Text ....5 ns - Flow-through - 9 / 10 / 11ns ESingle 3.3V +0.3V/-0.165V power supply ECommon data inputs and data outputs EIndividual BYTE WRITE ENABLE and GLOBAL WRITE control E Three chip enables for depth expansion and address pipelining E Clock...
Description 32K x 32 SRAM

File Size 256.87K  /  19 Page

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    Micron Technology, Inc.
Part No. MT55L512L18F
OCR Text ...ization Fast cycle times: 10ns, 11ns and 12ns 100-pin TQFP 165-pin FBGA Single +3.3V 5% power supply (VDD) Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) Advanced control logic for minimum control signal interface Individual B...
Description 8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)

File Size 371.28K  /  25 Page

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    Samsung Electronics
Part No. K8A5615EBA
OCR Text ... Access Time : 14.5ns (54MHz) / 11ns (66MHz) * Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap * Block Architecture - Eight 4Kword blocks and five hundreds eleven 32Kword blocks - Bank 0 contai...
Description Flash Memory

File Size 758.68K  /  60 Page

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    Galvantech
Part No. GVT71128B32 71128B32
OCR Text ...s. Fast access times: 10 and 11ns Fast clock speed: 83 MHz Provide high performance 2-1-1-1 access rate Fast OE# access times: 5.0ns 3.3V -5% and +10% power supply Separate isolated output buffer supply compatible with 3.3V and 2.5V I/O ...
Description 128K X 32 SYNCHRONOUS BURST SRAM
From old datasheet system

File Size 7.95K  /  1 Page

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