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  10.0-13.25 Datasheet PDF File

For 10.0-13.25 Found Datasheets File :: 260795    Search Time::5.954ms    
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    2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text ...VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 125 mW 150 -65 to + 150 C C V V V mA Document No. P10387EJ2V0DS00 (2nd edition) (Previous No. TD-2433) Date Published July 1995 P Printed in Japan 0 to 0.1 (c) 1993 2SC5008 ELECTRICA...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ...O VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 -65 to +150 V V V mA mW C C Document No. P10388EJ2V0DS00 (2nd edition) (Previous No. TD-2430) Date Published July 1995 P Printed in Japan 0 to 0.1 (c) 1993 2SC5009 ELECTRICAL CHARACT...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...2.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 PACKAGE DIMENSIONS in milim...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA*1 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz*2 VCE = 10 V, IC = 20 mA,f = 1.0 GHz VCE = 10 V, IC = 7 mA,f = 1.0 GHz A A *1 Pulse Measureme...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P1...0.3 +0.1 -0.05 0.15 +0.1 -0.05 PART NUMBER QUANTITY PACKING STYLE (1.25) 2 3 19...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...gh Gain Bandwidth Product (fT = 10 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (1.3) 2.0 0.2 0.60 0.65 ORDERI...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...O VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Cauti...0.2 11 2.5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...B = 1 V, IC = 0 VCE = 3 V, IC = 10 mA*1 VCE = 3 V, IC = 10 mA VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz VCE = 3 V, IC = 3 mA, f = 2.0 GHz A A Noise Figure NF 1.5 2.5 dB *1 Pulse Measurement; PW ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5081

HITACHI[Hitachi Semiconductor]
Part No. 2SC5081
OCR Text ... fT PG NF Min 15 -- -- -- 50 -- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V,...
Description Silicon NPN Epitaxial

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    2SC829 2SC829B 2SC829C

http://
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SC829 2SC829B 2SC829C
OCR Text ...V V V mA mW C C 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector to base volt...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay

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