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IRF[International Rectifier]
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Part No. |
IRHNJ57230SE JANSR2N7486U3 IRHNJ57230SEPBF IRHNJ57230SE-15
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OCR Text |
...0mA VDS > 15V, IDS = 7.8A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 100V VDD = 100V, ID = 12A, VGS =12V,RG = 7.5
ns
nH
Measured from the center of drain pad to center of source... |
Description |
12 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package Simple Drive Requirements
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File Size |
122.48K /
8 Page |
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Kersemi Electronic Co., Ltd.
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Part No. |
IRFR15N20D
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OCR Text |
...ce charge CCC 6.9 10 nc v ds = 160v q gd gate-to-drain ("miller") charge CCC 14 21 v gs = 10v, ? t d(on) turn-on delay time CCC 9.7 CCC v dd = 100v t r rise time CCC 32 CCC i d = 10a t d(off) turn-off delay time CCC 17 CCC r g = 6.8 ... |
Description |
SMPS MOSFET
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File Size |
3,774.35K /
10 Page |
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IRF[International Rectifier]
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Part No. |
IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260
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OCR Text |
....0mA VDS > 15V, IDS = 27A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =43A VDS = 100V VDD = 100V, ID =43A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source ... |
Description |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
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File Size |
114.68K /
8 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier] International Rectifier, Corp.
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Part No. |
IRFP250N IRFP250
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OCR Text |
...DS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 123 ID = 18A 21 nC VDS = 160V 57 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 18A ns --- RG = 3.9 --- RD = 5.5, See Fig. 10 D Between lead,... |
Description |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET(减振钢板基本\u003d 200第五的Rdson)\u003d 0.075ohm,身份证\u003d 30A条)
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File Size |
120.07K /
8 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHNA57260SE JANSR2N7473U2
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OCR Text |
...0mA VDS > 15V, IDS = 34A A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 53.5A VDS = 100V VDD = 100V, ID = 53.5A, VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
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File Size |
176.00K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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