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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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| Part No. |
S1A2272A01-S0B0 S1A2272A01
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| OCR Text |
...t current Low distortion: THD = 0.02% at VI = 300mV Pilot signal compensation Built-in monostable multivibrator. Variable input type noise A...225A Operating Temperature -20C - +75C
BLOCK DIAGRAM
SUB IN(-)
PLT CAN SIGNAL
PW ADJ
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| Description |
SR17 Series Cost Effective Digital Vane Sensor; side looker mounting; wire leads parallel to mounting plane; sinking output; 3.8 to 30 Vdc supply voltage FM NOISE CANCELLER Data Sheet
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| File Size |
97.36K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10M07JVFR
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| OCR Text |
0.007
POWER MOS V (R)
FREDFET
G
S D
S
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MO...225A
APT Reserves the right to change, without notice, the specifications and information contain... |
| Description |
High Voltage N-Channel enhancement mode power MOSFET
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| File Size |
116.29K /
4 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
S1A2271B01
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| OCR Text |
...nditions REC mode, NR-off, VI = 0 REC mode, PB out = 0dB RECout = -25dB, f = 500Hz RECout = -25dB, f = 2kHz NR-REC Boost GV(BST) RECout = -25dB, f = 5kHz RECout = -40dB, f = 10kHz RECout = 0dB, f = 10kHz NR-Boost Balance MAX.RECout level CB... |
| Description |
DOLBY B-TYBE NR PROCESSOR Data Sheet
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| File Size |
130.27K /
8 Page |
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it Online |
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Price and Availability
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