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TY Semiconductor Co., Ltd
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| Part No. |
NTJD5121NT1G
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| OCR Text |
...uous drain current (note 1) steady state t a = 25 c i d 295 ma t a = 85 c 212 t 5 s t a = 25 c 304 t a = 85 c 219 power dissipation (note 1) steady state t a = 25 c p d 250 mw t 5 s 266 pulsed drain current t p = 10 ... |
| Description |
Power MOSFET
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| File Size |
236.22K /
2 Page |
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it Online |
Download Datasheet
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Alpha & Omega Semiconductor...
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| Part No. |
AO4609
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| OCR Text |
... maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state ao4609 complementary e... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
140.40K /
7 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
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| Part No. |
SI1902DL-T1-E3
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| OCR Text |
...oted parameter symbol 5 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 0.70 0.66 a t a = 85 c 0.50 0.48 pulsed drain current i dm 1.0 co... |
| Description |
2.5 V Rated
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| File Size |
80.61K /
2 Page |
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it Online |
Download Datasheet |
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