p3db pdf Datasheet P3 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MC14070 MAX8867 L324F 72324 C1024 PJF2N70 NJM5532 2GMXX
	Product Description
	Full Text Search

p3db Datasheet PDF File

For p3db Found Datasheets File :: 460 Search Time::1.563ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Freescale Semiconductor, Inc
Part No.	AFT18S230S
OCR Text	... (maximum value measured at the p3db compression point across the 1805--1880 mhz bandwidth) ? ? 7.6 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 75 mhz bandwidth @ p out =50w...
Description	RF Power LDMOS Transitor
File Size	405.00K / 13 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RWP06040-10
OCR Text	...s 450mhz to 880mhz ? 40watts p3db typical ? gan hfet application ? uhf television description the rwp06040-10 is designed for wideband power amplifier appl ication frequencies from 450 to 880mhz. this module uses gan he...
Description	Wideband Power Amplifier
File Size	301.44K / 5 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT21S230S232S RC1206FR-108R2L ATC100B0R3BT500XT ATC100B0R6BT500XT ATC100B6R8BT500XT CDR34BX104AKWS
OCR Text	... (maximum value measured at the p3db compression point across the 2110--2170 mhz bandwidth) ? ? --19.3 ? ? vbw resonance point (imd third order intermodulation inflection point) aft21s230s aft21s232s vbw res ? 95 60 ? mhz gain flatness in 6...
Description	RF Power LDMOS Transistors
File Size	432.54K / 15 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0846G
OCR Text	... po=46.5dbm(typ.) @f=2.6ghz,p3db ? high efficiency ? d=60%(typ.) @f=2.6ghz,p3db ? designed for use in class ab linear amplifiers application ? mmds/umts/wimax quality ? gg packaging ? 4 inch tray (25 pcs) ...
Description	High-power GaN HEMT (small signal gain stage)
File Size	114.58K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
Part No.	AMMC-5026
OCR Text	...S11(dB) S22(dB) 28 25 P1dB, p3db (dBm) P1dB p3db 5 GAIN (dB) 22 19 16 13 10 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) 0 -5 -10 -15 Figure 1. Gain. Figure 2. Input and Output Return Loss. Figure 3. Output Power at P1dB...
Description	AMMC-5026 · 2 - 35 GHz GaAs MMIC Traveling Wave Amplifier 2-35 GHz GaAs MMIC Traveling Wave Amplifier
File Size	164.98K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0843G
OCR Text	... po=43.5dbm(typ.) @f=2.6ghz,p3db ? high efficiency ? d=60%(typ.) @f=2.6ghz,p3db ? designed for use in class ab linear amplifiers application ? mmds/umts/wimax quality ? gg packaging ? 4 inch tray (25 pcs) ...
Description	High-power GaN HEMT (small signal gain stage)
File Size	113.80K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0840G
OCR Text	... po=40.5dbm(typ.) @f=2.6ghz,p3db ? high efficiency ? d=60%(typ.) @f=2.6ghz,p3db ? designed for use in class ab linear amplifiers application ? mmds/umts/wimax quality ? gg packaging ? 4 inch tray (25 pcs) ...
Description	High-power GaN HEMT (small signal gain stage)
File Size	113.91K / 4 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1
OCR Text	... dc to 6 ghz ? output power (p3db): 18 w at 6 ghz ? linear gain: >10 db at 6 ghz ? operating voltage: 28 v ? low thermal resistance package general description pin configuration the triquint t1g6001...
Description	DC ?6 GHz 18 W GaN RF Power Transistor DC 6 GHz 18 W GaN RF Power Transistor
File Size	406.68K / 15 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	AFT21S232SR3 AFT21S230SR3
OCR Text	... (maximum value measured at the p3db compression point across the 2110--2170 mhz bandwidth) ? --19.3 ? vbw resonance point (imd third order intermodulation inflection point) aft21s230s aft21s232s vbw res ? 95 60 ? mhz gain flatness in 60 ...
Description	RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	561.02K / 15 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72A104KA01L ATC800A330JT ATC800A2R7BT ATC800A2R0BT ATC800A0R3BT ATC800A100JT ATC800A1R5BT ATC800A1R8BT GRM55ER72A475KA01L RF3934PCK-411 RF3934S2 RF3934SB
OCR Text	...formance ? output power 140w at p3db ? drain efficiency 60% at p3db ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband a...
Description	120W GaN WIDEBAND POWER AMPLIFIER
File Size	1,662.45K / 14 Page	View it Online	Download Datasheet

For p3db Found Datasheets File :: 460 Search Time::1.563ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |