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  measurment Datasheet PDF File

For measurment Found Datasheets File :: 394    Search Time::7.5ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FGR3000CV-90DA
OCR Text ...25C, ITM = 3000A, Instantaneous measurment Tj = 125C, IRM = 3000A, Instantaneous measurment Tj = 125C, VDRM Applied, VGK = -2V Tj = 125C, VRG = 17V Tj = 125C, VD = 2250V, VGK = -2V Tj = 125C, ITM = 3000A, IGM = 40A, VD = 2250V Tj = 125C, IT...
Description HIGH POWER INVERTER USE PRESS PACK TYPE

File Size 75.00K  /  5 Page

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    ALLEGRO[Allegro MicroSystems]
Part No. STR-W6735
OCR Text ...rom 0 V in the minus direction. measurment of the offset voltage VOCPBD(BS1) is taken when the V1-3 start-to-fall point switches from twopulses-after to one-pulse-after. After measuring VOCPBD(BS1), as shown in waveform 2, offset the input ...
Description Quasi-Resonant Topology Primary Switching Regulators

File Size 411.17K  /  14 Page

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    TBB1010

Renesas Electronics Corporation
Part No. TBB1010
OCR Text ...fs|, Ciss, Coss, Crss, NF, PG) measurment of FET1 Gate 1 Gate 2 Open VG2 VG1 RG ID VD A Drain Source Open measurment of FET2 Gate 2 VG2 Open VG1 Gate 1 RG A Open Source Drain ID VD Rev.2, Feb. 2003, page 4 of 10 T...
Description Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

File Size 67.12K  /  10 Page

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    MICREL[Micrel Semiconductor]
Part No. MIC184BMM MIC184BM MIC184
OCR Text ...ND 5 MEASUREMENT ERROR (C) measurment Error vs. Capcitance on T1 0 measurment ERROR (C) 0 -5 -10 -15 -20 -25 3.3V GND -2 -4 -6 -8 -10 -12 0 1 2 3 4 5 6 7 8 9 10 CAPACITANCE (nF) 5.0V -30 1x106 1x107 1x108 1x109 RESISTA...
Description Local/Remote Thermal Supervisor Advance Information

File Size 138.21K  /  21 Page

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    TBB1004

Hitachi Semiconductor
Part No. TBB1004
OCR Text ...fs|, Ciss, Coss, Crss, NF, PG) measurment of FET1 Gate 2 VG2 Open Open ID VD A Drain Source Gate 1 RG VG1 measurment of FET2 VG2 Gate 2 Drain ID VD A Gate 1 RG VG1 Open Source Open 4 TBB1004 * Equivalent Circuit...
Description Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

File Size 54.12K  /  11 Page

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    TBB1004 TBB1004DMTL-E TBB100406

Renesas Electronics Corporation
Part No. TBB1004 TBB1004DMTL-E TBB100406
OCR Text ...yfs|, Ciss, Coss, Crss, NF, PG) measurment of FET1 Gate 2 VG2 Open Open ID VD A Drain Source Gate 1 RG VG1 measurment of FET2 VG2 Gate 2 Drain ID VD A Gate 1 RG VG1 Open Source Open Rev.11.00 Aug 22, 2006 page 4 of...
Description Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

File Size 93.84K  /  10 Page

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    STR-W6765

Allegro MicroSystems
Part No. STR-W6765
OCR Text ...rom 0 V in the minus direction. measurment of the offset voltage VOCPBD(BS1) is taken when the V1-3 start-to-fall point switches from twopulses-after to one-pulse-after. After measuring VOCPBD(BS1), as shown in waveform 2, offset the input ...
Description Quasi-Resonant Topology Primary Switching Regulators

File Size 420.35K  /  15 Page

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    FGR3000FX-90DA

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FGR3000FX-90DA
OCR Text ...25C, ITM = 3000A, Instantaneous measurment Tj = 125C, IRM = 3000A, Instantaneous measurment Tj = 125C, VDRM Applied, VGK = -2V Tj = 125C, VRG = 17V Tj = 125C, VD = 3000V, VGK = -2V Tj = 125C, ITM = 3000A, IGM = 75A, VD = 3000V Tj = 125C, IT...
Description HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE

File Size 84.72K  /  5 Page

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    FGR3000FX-90DA

Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FGR3000FX-90DA
OCR Text ...25C, ITM = 3000A, Instantaneous measurment Tj = 125C, IRM = 3000A, Instantaneous measurment Tj = 125C, VDRM Applied, VGK = -2V Tj = 125C, VRG = 17V Tj = 125C, VD = 3000V, VGK = -2V Tj = 125C, ITM = 3000A, IGM = 75A, VD = 3000V Tj = 125C, IT...
Description HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装

File Size 78.49K  /  5 Page

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For measurment Found Datasheets File :: 394    Search Time::7.5ms    
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