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  irfd123 tmos field effect tran Datasheet PDF File

For irfd123 tmos field effect tran Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
Part No. MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D
Description tmos POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM tmos是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆
From old datasheet system
tmos V Power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 256.98K  /  10 Page

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    MTV10N100E_D ON2669 MTV10N100E-D

ON Semiconductor
Part No. MTV10N100E_D ON2669 MTV10N100E-D
Description tmos E-FET Power field effect transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tmos POWER FET 10 AMPERES 1000 VOLTS

File Size 268.98K  /  10 Page

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    MTD1N80E MTD1N80E-D

ON Semiconductor
Motorola, Inc
Part No. MTD1N80E MTD1N80E-D
Description tmos E-FET Power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

File Size 268.90K  /  10 Page

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    MTD3N25E MTD3N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD3N25E MTD3N25E-D
Description tmos E-FET Power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

File Size 253.11K  /  10 Page

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    MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G

ONSEMI[ON Semiconductor]
Part No. MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
Description tmos Power FET
tmos E-FET Power field effect transistor DPAK for Surface Mount

File Size 93.40K  /  8 Page

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    MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D
Description tmos E-FET Power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system

File Size 266.21K  /  10 Page

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    MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D
Description tmos E-FET Power field effect transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tmos POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system

File Size 262.08K  /  10 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
Description tmos E-FET Power field effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tmos POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1909

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1909
Description From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE tmos MOSFET
Low Rds(on) Small-Signal MOSFETs tmos Single P-Channel field effect transistors

File Size 122.41K  /  6 Page

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    MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D

ON Semiconductor
ETC
Motorola, Inc
Part No. MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D
Description tmos E-FET Power field effect transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tmos POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system

File Size 264.45K  /  10 Page

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For irfd123 tmos field effect tran Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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