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id-18a Datasheet PDF File

For id-18a Found Datasheets File :: 3599 Search Time::1.453ms
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				Alpha & Omega Semiconductors Alpha & Omega Semicondu...
Part No.	AOT8N80 AOTF8N80
OCR Text	...ent v ds =800v, v gs =0v bv dss id=250 a, vgs=0v m a v ds =0v, v gs =30v v drain-source breakdown voltage maximum body-diode pulsed curre...1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the j...
Description	800V, 7.4A N-Channel MOSFET
File Size	346.36K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF840_02
OCR Text	ID 8A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. T...
Description	N-CHANNEL 500V - 0.75ヘ - 8A TO-220 PowerMesh⑩II MOSFET
File Size	172.13K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7907PBF
OCR Text	...S = 10V 8 7 6 5 D2 D2 D1 D1 ID 9.1A 11A S2 G2 S1 G1 1 2 3 4 SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage ...
Description	HEXFETR Power MOSFET
File Size	291.53K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7904PBF
OCR Text	...GS = 10V Q2 10.8m:@VGS = 10V ID 7.6A 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Vo...1 61 1.4 0.9 0.011 -55 to + 150 Q1 Max. 30 20 Q2 Max. Units V 11 8.9 89 2.0 1.3 0.016...
Description	Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box
File Size	254.03K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT8N65
OCR Text	...zero gate voltage drain current id=250 a, vgs=0v a. the value of r q ja is measured with the device in a still air environ ment with t...1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the j...
Description	650V, 8A N-Channel MOSFET
File Size	151.23K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7491 IRF7491TR
OCR Text	... RDS(on) max 16m@VGS = 10V ID 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Inc...1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings ...
Description	80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	502.63K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ530 2SJ530L 2SJ530S
OCR Text	...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	56.07K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ541
OCR Text	...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.02K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ546
OCR Text	...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.21K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ548
OCR Text	...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Charac...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.21K / 9 Page	View it Online	Download Datasheet

For id-18a Found Datasheets File :: 3599 Search Time::1.453ms
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