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  hj-fet Datasheet PDF File

For hj-fet Found Datasheets File :: 107    Search Time::1.578ms    
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    UPG2118K-E3

California Eastern Laboratories
NJR
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. UPG2118K-E3
OCR Text ... ordering information ? e-mode hj-fet technology ? single +3.2v power supply ? high efficiency: pae = 42% min ? high saturated power: p out = +31.5 dbm min ? flexible frequency range ? 20-pin qfn package : (4.15 x...
Description 800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 4.15 X 4.15 MM, 0.90 MM HEIGHT, QFN-20
NECs 1.5W GaAs MMIC POWER AMPLIFIER

File Size 299.07K  /  4 Page

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    NE321000 NE321000-

NEC, Corp.
NEC[NEC]
Part No. NE321000 NE321000-
OCR Text hj-fet CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, indust...
Description TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五(巴西)直| 15mA的我(直)|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet CHIP

File Size 46.74K  /  12 Page

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    Duracell
Part No. NE4210S01-T1B NE4210S01-A
OCR Text hj fet ne4210s01 description nec's ne4210s01 is a pseudomorphic hetero-junction fet that uses the junction between si-doped aigaas and undoped ingaas to create very high mobility electrons. the device features mushroom shaped tial gates fo...
Description
File Size 249.33K  /  7 Page

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    D5001UK

Seme LAB
Part No. D5001UK
OCR Text ...nical data 12 3 4 a m f e d c b hj i g k gold metallised multi-purpose silicon dmos rf fet 20w ? 50v ? 175mhz single ended features  simplified amplifier design  suitable for broad band applications low c rss  simple bias circuits  lo...
Description ROHS COMPLIANT METAL GATE RF SILICON FET

File Size 62.96K  /  5 Page

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    NE32500 NE27200

NEC[NEC]
Part No. NE32500 NE27200
OCR Text hj-fet CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain ma...
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet CHIP

File Size 38.15K  /  8 Page

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    NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284
OCR Text hj-fet DESCRIPTION The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems...
Description L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet L至X波段超低噪声放大器N沟道黄建忠场效应
KJ 6C 6#12 PIN PLUG L至X波段超低噪声放大器N沟道黄建忠场效应

File Size 61.34K  /  10 Page

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    NE325S01 NE325S01-T1 NE325S01-T1B

NEC Corp.
NEC[NEC]
Part No. NE325S01 NE325S01-T1 NE325S01-T1B
OCR Text hj-fet DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. P...
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet

File Size 59.00K  /  12 Page

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    Duracell
Part No. NE3210S01-T1B NE3210S01-T1B-A
OCR Text hj fet ne3210s01 description nec's ne3210s01 is a pseudomorphic hetero-junction fet that uses the junction between si-doped aigaas and undoped ingaas to create very high mobility electrons. the device features mushroom shaped...
Description
File Size 365.09K  /  7 Page

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    NEC Corp.
NEC[NEC]
Part No. NE434S01 NE434S01-T1B NE434S01-T1
OCR Text hj-fet DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 ...
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet

File Size 75.30K  /  12 Page

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