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  fet-30v Datasheet PDF File

For fet-30v Found Datasheets File :: 2053    Search Time::0.812ms    
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    SMG2309

SeCoS Halbleitertechnologie GmbH
Part No. SMG2309
OCR Text FET RoHS Compliant Product Description L A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0...30V,RDS(ON) 75m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Un...
Description P-Channel Enhancement Mode Power Mos.FET

File Size 270.08K  /  4 Page

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    2SK2906-01

FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
Part No. 2SK2906-01
OCR Text ...valanche Rated N-channel MOS-FET 60V 7,8m 100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power A...30V VDS=0V ID=50A ID=50A VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=100A RGS=10 Tch=2...
Description    N-channel MOS-FET
N-channel MOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 248.45K  /  3 Page

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    SST6301K

SeCoS Halbleitertechnologie GmbH
Part No. SST6301K
OCR Text FET SOT-26 Description 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST6301K utiltzed advance processing techniques to achieve the lowest...30V,RDS(ON) 1.0[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C ...
Description N-Channel Enhancement Mode Power Mos.FET

File Size 384.36K  /  4 Page

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    AME5140AEQAADJY AME5140BEQAADJZ AME5140AEQAADJZ3 AME5140AEEAADJY AME5140AEEAADJZ3 AME5140AEQVADJY AME5140AEQVADJZ3 AME51

Analog Microelectronics
Part No. AME5140AEQAADJY AME5140BEQAADJZ AME5140AEQAADJZ3 AME5140AEEAADJY AME5140AEEAADJZ3 AME5140AEQVADJY AME5140AEQVADJZ3 AME5140 AME5140AEEVADJY AME5140AEEVADJZ AME5140AEEVADJZ3 AME5140AEVAADJY AME5140AEVAADJZ-3 AME5140AEVAADJZ3 AME5140AEVVADJY AME5140AEVVADJZ3
OCR Text ...ost Converter With 30V Internal FET Switch n Typical Application L/6.8H D1 IN R3 51K EN GND C1 4.7F GND R2 13.3K CF 680pF C2 22F SW VOUT 5V 800mA R1 43K VIN 4.2V AME5140 FB EN Figure 1. 4.2V to 5V Boost Converter n Feature...
Description 1.6 MHz Boost Converter With 30V Internal FET Switch

File Size 209.68K  /  22 Page

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    SMG2306NE

SeCoS Halbleitertechnologie GmbH
Part No. SMG2306NE
OCR Text fet 12-apr-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view...30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 2 of 4 h...
Description N-Channel Enhancement Mode Mos.FET

File Size 594.32K  /  4 Page

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    SMG2306N

SeCoS Halbleitertechnologie GmbH
Part No. SMG2306N
OCR Text fet 12-apr-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view...30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 2 of 4 h...
Description N-Channel Enhancement Mode Mos.FET

File Size 563.03K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4607
OCR Text ...co-packaged with the n- channel fet to minimize body diode losses. ao4607 is pb-free (meets rohs & sony 259 specifications). ao4607l is ...30v ma gate-body leakage current v ds =0v, v gs =20v v r =30v, t j =125c v r =30v, t j =150c gate th...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 407.02K  /  8 Page

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    MIC501405 MIC5015 MIC5014BM MIC5014BN MIC5015YN

Micrel Semiconductor
Part No. MIC501405 MIC5015 MIC5014BM MIC5014BN MIC5015YN
OCR Text ...ristics All data measured using FET probe to minimize resistive loading Supply Current (Output Asserted) 6 GATE ENHANCEMENT (V) Gate E...30V Construction Hints High current pulse circuits demand equipment and assembly techniques that...
Description Low-Cost High- or Low-Side MOSFET Driver

File Size 511.65K  /  12 Page

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    SMG3J14

SeCoS Halbleitertechnologie GmbH
Part No. SMG3J14
OCR Text FET RoHS Compliant Product A Description The SMG3J14 provide the designer with the best combination of fast switching, low on-resist...30V,RDS(ON) 85m[ P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25...
Description P-Channel Enhancement Mode Power Mos.FET

File Size 481.42K  /  4 Page

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    TY Semiconductor Co., Ltd
Part No. PMV45EN
OCR Text fet) in a plastic package using trenchmos technology. this product is designed and qualified for use in computing, communications, consume...30v i d drain current t sp =25c; v gs =10v; see figure 1 ; see figure 3 --5.4a v gs gate-source v...
Description N-channel TrenchMOS logic level FET Logic-level compatible Very fast switching

File Size 240.26K  /  3 Page

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