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RF1001 G527525 U12C3 68HC705 CD748A RF1001 G4PH50S 500RL
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  emiiter Datasheet PDF File

For emiiter Found Datasheets File :: 43    Search Time::0.985ms    
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    1MBI300S-120

Fuji Electric
Part No. 1MBI300S-120
OCR Text ...Collector current vs. Collector-emiiter voltage Tj= 25C (typ.) 700 VGE= 20V 15V 12V 700 IGBT Module Collector current vs. Collector-emiiter voltage Tj= 125C (typ.) VGE= 20V 15V 12V 600 600 500 500 Collector current : Ic...
Description 1200V / 300A 1 in one-package

File Size 473.08K  /  4 Page

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    2N3767SMD

Seme LAB
Part No. 2N3767SMD
OCR Text ...ector- Emitter Voltage (IB = 0) emiiter- Base Voltage (IB = 0) Base Current Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25C Derate above 25C 100V 80V 6V 2A 4A -55 to +150C 25W 5C/W S...
Description NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS

File Size 19.46K  /  2 Page

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    2SA812

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SA812
OCR Text ...lector Current vs. Collector to emiiter Voltage Fig.5 Base and Collector Saturation Voltage vs. Collector Current Fig.6 DC Current Gain vs. Collector Current 2 www.kexin.com.cn
Description PNP Silicon Epitaxial Transistor

File Size 119.48K  /  2 Page

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    2SC3743

Inchange Semiconductor Company Limited
Part No. 2SC3743
OCR Text emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) *Wide Area of Safe Operation *High Speed Switching * APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VCBO Collec...
Description Silicon NPN Power Transistor

File Size 206.12K  /  2 Page

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    2SC3371

Inchange Semiconductor Company Limited
Part No. 2SC3371
OCR Text emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A *High Speed Switching * APPLICATIONS *Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) S...
Description Silicon NPN Power Transistor

File Size 177.59K  /  2 Page

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    2SC3376

Inchange Semiconductor Company Limited
Part No. 2SC3376
OCR Text emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) *High Speed Switching * APPLICATIONS *Switching regulator and high voltage switching applications. *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL P...
Description Silicon NPN Power Transistor

File Size 209.64K  /  2 Page

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    2SC3353

Inchange Semiconductor Company Limited
Part No. 2SC3353
OCR Text emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A *High Speed Switching * APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=2...
Description Silicon NPN Power Transistor

File Size 206.52K  /  2 Page

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    2MBI100S-120

ETC
Part No. 2MBI100S-120
OCR Text ...Collector current vs. Collector-emiiter voltage Tj= 25C (typ.) 250 250 IGBT Module Collector current vs. Collector-emiiter voltage Tj= 125C (typ.) VGE= 20V15V 12V 200 200 VGE= 20V15V 12V Collector current : Ic [ A ] 150 10...
Description IGBT Module

File Size 540.16K  /  4 Page

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    IXGF32N170

IXYS Corporation
Part No. IXGF32N170
OCR Text ...-to-Emitter Voltage vs. Gate-to-emiiter voltage 8 7 6 TJ = 25C 100 90 80 TJ - Degrees Centigrade Fig. 6. Input Admittance I C - Amperes 70 60 50 40 30 20 TJ = 125C 25C - 40C VC E - Volts 5 4 IC = 64A 32A 3 2 1 6 7 8...
Description High Voltage IGBT

File Size 175.98K  /  5 Page

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    IXBH10N170

IXYS Corporation
Part No. IXBH10N170
OCR Text ...-to-Emitter Voltage vs. Gate-to-emiiter voltage 1 0 9 8 T J = 25 C 20 1 7.5 1 5 Fig. 6. Input Admittance VC E - Volts 7 6 5 4 3 5A 2 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5 10A I C = 20A I C - Amperes 1 2.5 1 0 7.5 5 2.5 0 4 5 6 7 8...
Description High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

File Size 618.91K  /  5 Page

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For emiiter Found Datasheets File :: 43    Search Time::0.985ms    
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