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ADPOW[Advanced Power Technology]
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| Part No. |
APT10M19SVFR APT10M19BVFR APT10M19BVFR_04 APT10M19BVFR04
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| OCR Text |
...ergy Rated * FAST RECOVERY BODY DIODE
G S D
* TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,...100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125C) Gate-Source Leakage... |
| Description |
POWER MOS V FREDFET
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| File Size |
115.86K /
4 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM10TDUM19PG
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| OCR Text |
...
ns
J J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
... |
| Description |
Triple dual common source MOSFET Power Module
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| File Size |
284.34K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
70CRU02
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| OCR Text |
...C = 145C TC = 25C TC = 100C Per Diode Per Diode Per Module
Max
200 35 300 67 - 55 to 175
Units
V A W C
Operating Junction and Sto...100V di/dt = 200A/s IF = 1A VR = 30V diF /dt = 200A/s
IRRM
Peak Recovery Current
-
Qrr
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| Description |
200V 35A Ultra-Fast Doubler Diode in a TO-218 package
Ultrafast Rectifier
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| File Size |
134.33K /
6 Page |
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it Online |
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SUTEX[Supertex, Inc]
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| Part No. |
AT9933
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| OCR Text |
... the MOSFET through a switching diode with a small (1nF) capacitor between VIN and GND (as long as the drain voltage does not exceed 100V). Since the drain of the FET is at a voltage equal to the sum of the input and output voltages, the IC... |
| Description |
Hysteretic Boost-Buck (cuk) LED Driver IC
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| File Size |
413.24K /
9 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM350DU-5F
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| OCR Text |
... super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sy...100V, IC = 350A, VGE = 10V IE = 350A, VGE = 0V Min. - - 3.0 - - - - Typ. - - 4.0 1.2 1.10 1320 - Max... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
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| File Size |
45.83K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM350DU-5F
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| OCR Text |
... super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sy...100V, IC = 350A, VGE = 10V IE = 350A, VGE = 0V Min. - - 3.0 - - - - Typ. - - 4.0 1.2 1.10 1320 - Max... |
| Description |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
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| File Size |
53.22K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM450HA-5F
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| OCR Text |
... super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sy...100V, IC = 450A, VGE = 10V IE = 450A, VGE = 0V Min. -- -- 3.0 -- -- -- -- Typ. -- -- 4.0 1.2 1.1 176... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
43.83K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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