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4HC573 AS5030 XG0003P 4HC573 BC546 SMC51 S202D LPS354
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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
OCR Text ...N 1.0 Typical Performance curves 30 APT10090BLL - SLL ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( "C) 0.164 Power (Watts) 0.257 Case temperature 0.125F 0.00592F 25 20 VGS =15,10V& 7.5V 7V 6.5 15 6V 10 5.5V 5V 0 0 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3

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    TPCC8104

Toshiba Semiconductor
Part No. TPCC8104
OCR Text ...8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig....
Description MOSFETs

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    ADPOW[Advanced Power Technology]
Part No. APT100GT60JR
OCR Text curves (R) APT100GT60JR 600V APT100GT60JR Thunderbolt IGBT(R) The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ult...
Description Thunderbolt IGBT

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    TPCC8106

Toshiba Semiconductor
Part No. TPCC8106
OCR Text ...8. 8. 8. 8. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 8.1 8.1 8.1 8.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig....
Description MOSFETs

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    MMBT3906T

SeCoS Halbleitertechnologie GmbH
Part No. MMBT3906T
OCR Text ... individually. characteristic curves mmbt3906t pnp silicon general purpose transistors elektronische bauelemente 12-apr-2010 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be inf...
Description General Purpose Transistors

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT11N80BC3 APT11N80BC3G
OCR Text ...N 1.0 Typical Performance curves ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 0 VGS =15 & 10V APT11N80BC3 RC MODEL Junction temp. (C) 0.345 Power (watts) 0.455 Case temperature 0.101 0.00375 6.5V 6V 5.5V 5V 4.5V 4V FIG...
Description Power MOSFET; Package: TO-247 [B]; ID (A): 11; RDS(on) (Ohms): 0.45; BVDSS (V): 800;
Super Junction MOSFET

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    ADPOW[Advanced Power Technology]
Part No. APT150GN120J
OCR Text curves (R) APT150GN120J 1200V APT150GN120J E G C E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduc...
Description IGBT

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    TOSHIBA
Part No. TLP2309
OCR Text ...st circuits and characteristics curves test circuits and characteristics curves test circuits and characteristics curves test circuits and characteristics curves 12.1. 12.1. 12.1. 12.1. test circuits test circuits test circuits test cir...
Description Photocoupler (photo-IC output)

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    TOSHIBA
Part No. TLP2301
OCR Text ... 11. 11. 11. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) fig. fig. fig. fig. 11.1 11.1 11.1 11.1 i i i i f f f f - t - t - t - t a a a a fig. fig. fig....
Description Photocoupler (photo-IC output)

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