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				OKI[OKI electronic componets]
Part No.	MSM66577 MSM66Q577
OCR Text	...pull-up resistors into the chip contributes to overall design compactness. Making them programmable on a per-bit basis allows complete flexibility in circuit board layout and system design. These programmable pull-up resistors are available...
Description	16-Bit Microcontroller
File Size	206.35K / 34 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NC7SZ384 NC7SZ384L6X NC7SZ384M5X NC7SZ384P5X
OCR Text	...t is not tested. The bus switch contributes no propagation delay other than the RC delay of the typical On Resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance). Note 8: TA =...
Description	TinyLogic UHS 1-Bit Low Power Bus Switch TinyLogic UHS 1-Bit Low Power Bus Switch
File Size	105.23K / 8 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD22105 AD22105AR AD22105AR-REEL7 AD22105ARZ AD22105AR-REEL
OCR Text	... Likewise, the 1% resistor only contributes 90% of 1% or 0.9% error to the combination. These two contributions are additive resulting in a total compound resistor tolerance of 1.4%. EFFECT OF RESISTOR TOLERANCE AND THERMAL DRIFT ON SETPOI...
Description	Low Voltage, Resistor Programmable Thermostatic Switch Low Voltage Resistor Programmable Thermostatic Switch
File Size	255.76K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF140
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input re...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	162.25K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF141G
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resis...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	141.68K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF148
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input re...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	145.04K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF150
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input re...
Description	N-CHANNEL MOS LINEAR RF POWER FET
File Size	146.86K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF151G
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resis...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	155.18K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF151
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resis...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	182.89K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRF154
OCR Text	...t high temperatures, because it contributes to the power dissipation within the device. MOUNTING OF HIGH POWER RF POWER TRANSISTORS The package of this device is designed for conduction cooling. It is extremely important to minimize the ...
Description	N-CHANNEL BROADBAND RF POWER MOSFET
File Size	160.11K / 8 Page	View it Online	Download Datasheet

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