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    IRF054SMD

SemeLAB
Seme LAB
International Rectifier
http://
Part No. IRF054SMD
Description N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))

File Size 22.26K  /  2 Page

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    IRFN140SMD

TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
Part No. IRFN140SMD
Description ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))

File Size 22.23K  /  2 Page

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    IRFE230 2N6798U

NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
Part No. IRFE230 2N6798U
Description N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω))
N-Channel N沟道

File Size 16.94K  /  2 Page

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    IRFE9130

Seme LAB
Part No. IRFE9130
Description P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))

File Size 16.50K  /  2 Page

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    1-1827876-0 2-1827876-4 1-1827876-2 2-1827876-6 2-1827876-0 2-1827876-2 1-1827876-3 1-1827876-6 C-1827876

TE Connectivity Ltd
Tyco Electronics
Part No. 1-1827876-0 2-1827876-4 1-1827876-2 2-1827876-6 2-1827876-0 2-1827876-2 1-1827876-3 1-1827876-6 C-1827876
Description THIS DRAWING IS A contROLLED DOCUMENT.
DYNAMIC D1200D 2.5mm PITCH HDR assy
DYNAMIC DI200D 2.5mmPITCH HDR assy (H-TYPE)

File Size 244.48K  /  3 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.38K  /  2 Page

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    Molex, Inc.
MOLEX INC
Part No. 10-63-1039 10-63-1079 10-63-1049
Description 5.08MM 3CKT KK WAFER assy 528503A 3 contACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
5.08SPOX ST FR/LC HDR 7CK 528507A
5.08MM 4CKT KK WAFER assy 528504A

File Size 52.10K  /  1 Page

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. SML100W18
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))

File Size 25.75K  /  2 Page

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Part No. SWPR-001T-P025
Description RECEP cont FOR JWPF

File Size 219.98K  /  2 Page

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