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common-drain Datasheet PDF File

For common-drain Found Datasheets File :: 14337 Search Time::3.687ms
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				Polyfet RF Devices
Part No.	LP80114
OCR Text	...n typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source...
Description	RF POWER LDMOS TRANSISTOR
File Size	50.59K / 2 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPC8109
OCR Text	... 4 5 0 10 20 30 40 common source v ds 10 v pulse test 100 ta 55c 25 0 0 2 4 6 10 12 8 ...drain power dissipation p d (w) gate threshold voltage v th (v) ambient temperature ...
Description	Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
File Size	216.48K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3J120TU
OCR Text	... 1% v in : t r , t f < 5 ns common source ta = 25 c in 0 ? 2.5v 10 s v dd out r g r l t on 90% 10% ?2.5 v 0 v 90% ...drain - source voltage v ds (v) i d ? v ds drain current i d (a) 0 -8 0 -0.5 ...
Description	Field-Effect Transistor Silicon P-Channel MOS Type
File Size	226.85K / 6 Page	View it Online	Download Datasheet

				Power Integrations Inc Power Integrations, Inc.
Part No.	TOP224Y TOP227Y TOP223Y TOP221Y TOP222Y TOP226Y TOP225Y TOP222P
OCR Text	...er return. Primary side circuit common and reference point. P and G package - Primary side control circuit common and reference point. SOURC...DRAIN SOURCE CONTROL Y Package (TO-220/3) SOURCE 1 SOURCE 2 SOURCE 3 CONTROL 4 8 7 6 5 S...
Description	Three-terminal Off-line PWM Switch
File Size	469.52K / 20 Page	View it Online	Download Datasheet

				Polyfet RF Devices
Part No.	LP80214
OCR Text	...n typ max units test conditions common source power gain drain efficiency total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to source voltage gate to source...
Description	RF POWER LDMOS TRANSISTOR
File Size	51.61K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10045
OCR Text	common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 watt...Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at ...
Description	30 Watts, 1.60.65 GHz GOLDMOS Field Effect Transistor 30 Watts 1.60-1.65 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
File Size	206.38K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3667
OCR Text	... drain current i d (a) common source tc = 25c pulse test drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ? ) common source tc = 25c pulse test drain current i d (a) ...
Description	Search --To 2SK3667
File Size	283.63K / 6 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOC2802
OCR Text	...oad switch, facilita ted by its common-drain configuration. wlcsp 1.57x1.57_4 symbol v ss v gs t a =25c i s i sm p d t j , t stg note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max -55 to 150 60 power dissip...
Description	common-drain Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	350.78K / 5 Page	View it Online	Download Datasheet

For common-drain Found Datasheets File :: 14337 Search Time::3.687ms
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