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意法半导
ST Microelectronics
STMicroelectronics N.V.
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| Part No. |
M48T37YMH M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70MH6TR M48T37V-70MH6TR M48T37Y-10MH1 M48T37VSH M48T37V-70MH1TR M48T37V-10MH6TR
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| OCR Text |
... 32,768 Hz CRYSTAL POWER 16 x 8 biport SRAM ARRAY
A0-A14
LITHIUM CELL VOLTAGE SENSE AND SWITCHING CIRCUITRY VPFD
32,752 x 8 SRAM ARRAY
DQ0-DQ7
E W G
VCC
RST
VSS
AI03253
3/20
M48T37Y, M48T37V
Table 4. AC Meas... |
| Description |
TRANS PREBIASED DUAL NPN SOT363
TRANS PREBIASED DUAL COMP SOT363
TRANS PREBIAS DUAL COMP SOT-563
TRANS PREBIASED DUAL PNP SOT-363
DIODE ZENER SINGLE 150mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL
3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER SINGLE 300mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-23 3K/REEL 3.3 - 5V56千位2KB的SRAM x8计时
DIODE ZENER DUAL ISOLATED 200mW 3.3Vz 5mA-Izt 0.0606 5uA-Ir 1 SOT-363 3K/REEL 3.3 - 5V56千位32KB的SRAM x8计时
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| File Size |
131.17K /
20 Page |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M48T37V M48T37Y
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| OCR Text |
... and switching circuitry 16 x 8 biport sram array 32,752 x 8 sram array a0-a14 dq0-dq7 e w g power irq/ft wdi battery low figure 3. block diagram 3/20 m48t37y, m48t37v
ai02325 c l = 100pf c l includes jig capacitance 645 w devi... |
| Description |
3.3V-5V 256Kbit (32Kb x8) Timekeeper SRAM(256K32K x 8) Timekeeper 静态RAM) 3.3 - 5V56Kbit（的32KB × 8）计时器的SRAM56K位（32K的8）计时器静态内存）
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| File Size |
176.84K /
20 Page |
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SGS Thomson Microelectronics
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| Part No. |
M48T128Y-70PM1
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| OCR Text |
...emory locations consist- ing of biport? read/write memory cells within the static ram array. the m48t128y/v in- cludes a clock control circuit which updates the clock bytes with current information once per sec- ond. the information can be ... |
| Description |
3.3V-5V 1 MB (128K X 8) TIMEKEEPER SRAM
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| File Size |
116.72K /
18 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
M48T02
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| OCR Text |
...e and switching circuitry 8 x 8 biport sram array 2040 x 8 sram array a0-a10 dq0-dq7 e w g power bok symbol parameter value unit t a ambient operating temperature 0 to 70 c t stg storage temperature (v cc off, oscillator off) C40 to 85 c t ... |
| Description |
16 KBIT (2KB X8) TIMEKEEPER SRAM
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| File Size |
124.08K /
19 Page |
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it Online |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M48T212Y-85MH6 M48T212Y-85MH1TR M48T212Y-70MH1 M48T212Y-85MH6TR M48T212V-70MH1TR M48T212V-70MH6 M48T212V-70MH6TR M48T212V-85MH6 M48T212V-85MH6TR M48T212V-85MH1
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| OCR Text |
... memory locations consisting of biport tm read/write memory cells within the static ram array. clock circuitry up- dates the clock bytes with current information once per second. the information can be accessed by the user in the same manne... |
| Description |
Shielded Multiconductor Cable; Number of Conductors:7; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
Multiconductor Cable; Number of Conductors:7; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Temperature Max:80 C RoHS Compliant: Yes
5V/3.3V TIMEKEEPER[ CONTROLLER 5V/3.3V计时[控制
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| File Size |
152.97K /
23 Page |
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SGS Thomson Microelectronics
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| Part No. |
M48T512Y-70PM1 M48T512V
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| OCR Text |
... memory locations consisting of biport? read/write memory cells within the static ram array. the m48t512y/v includes a clock control circuit which updates the clock bytes with current information once per second. the information can be acce... |
| Description |
3.3V-5V 4 MB (512K X 8) TIMEKEEPER SRAM
3.3V-5V 4 Mbit (512Kb x8) TIMEKEEPER SRAM
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| File Size |
119.22K /
18 Page |
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it Online |
Download Datasheet |
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