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TTINY 3C7V5 2SD1769 0F822A IM46GR 74LS11 IM46GR MAX11
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  BCR Datasheet PDF File

For BCR Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BCR1AM-12 BCR1AM-12-A6 BCR1AM-12-TB

Renesas Electronics Corporation
Part No. BCR1AM-12 BCR1AM-12-A6 BCR1AM-12-TB
Description Triac Low Power Use

File Size 130.90K  /  7 Page

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HUA FENG CIRCUIT





    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR8CM BCR8
Description MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..

File Size 81.41K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. BCR512
Description NPN Silicon Digital Transistor

File Size 113.83K  /  4 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BCR519
Description From old datasheet system
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

File Size 35.02K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. BCR521
Description NPN Silicon Digital Transistor

File Size 114.43K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. BCR1AM-12
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 68.10K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. BCR523
Description NPN Silicon Digital Transistor

File Size 114.64K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. BCR3KM-14
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 88.36K  /  5 Page

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    BCR6AM BCR6

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR6AM BCR6
Description MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 80.34K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. BCR5AS
Description MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 92.12K  /  5 Page

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Part: BCR 205W H6327
Maker: Infineon Technologies
Pack: ETC
Stock: Reserved
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