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  900v 100ma Datasheet PDF File

For 900v 100ma Found Datasheets File :: 94    Search Time::4.187ms    
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    CZTUX8710

Central Semiconductor Corp
Part No. CZTUX8710
OCR Text ...n typ max units i cev v ce =900v, v be =1.5v 100 a i cev v ce =900v, v be =1.5v, t a =125c 1.0 ma i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma 450 v v ce(sat) i c =100ma, i b =10ma 0.8 v v ce(sat) i c =200ma, i b =20ma 1.0 ...
Description SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

File Size 593.21K  /  2 Page

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    BUL742C

Inchange Semiconductor Company Limited
Part No. BUL742C
OCR Text ...llector cutoff current v ces = 900v ; v eb =0 v ces = 900v ; v eb =0,t c = 150 10 200 a h fe-1 dc current gain i c = 10ma; v ce = 2v 15 h fe-2 dc current gain i c = 0.8a; v ce = 2v 15 h fe-3 dc current gain ...
Description isc Silicon NPN Power Transistor

File Size 84.54K  /  2 Page

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    C3675

Sanyo Semicon Device
Part No. C3675
OCR Text ...fused planar silicon transistor 900v/100ma high-voltage amplifier high-voltage switching applications ordering number:en1800e 2sc3675 n2098ha (kt)/80796ts (koto) 8-9202/4237at/3195ki, ts no.1800C1/3 specifications absolute maximum ratings ...
Description Search --To 2SC3675

File Size 127.30K  /  3 Page

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    CMXD2004TO10

Central Semiconductor Corp
Part No. CMXD2004TO10
OCR Text ...s device can be configured as a 900v switching diode. See optional mounting pad configuration. MARKING CODE: X04TO SOT-26 CASE MAXIMUM R...100ma VR=0, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100 100 100 300 1.0 5.0 50 UNITS nA A V V pF ns ...
Description SURFACE MOUNT TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES

File Size 486.87K  /  2 Page

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    BUL742C

Inchange Semiconductor Company Limited
Part No. BUL742C
OCR Text ...= 0.2A IC= 2.5A; IB= 0.8A VCES= 900v; VEB=0 VCES= 900v; VEB=0,TC= 150 MIN 400 11 BUL742C TYP. MAX UNIT V V 0.2 0.4 1.0 1.2 10 200 V V V V A Output Capacitance w ww scs .i IC= 10mA; VCE= 2V IC= 0.8A; VCE= 2V ...
Description Silicon NPN Power Transistor

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    C4630

Sanyo Semicon Device
Part No. C4630
OCR Text ...fused planar silicon transistor 900v/100ma high-voltage amplifier, high-voltage switching applications ordering number:en3699a 2sc4630 11599ha (kt)/91296yk (koto) ta-0465 no.3699C1/3 specifications absolute maximum ratings at ta = 25?c p...
Description 2SC4630

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    6MBI100U4B-170

Fuji Electric
Part No. 6MBI100U4B-170
OCR Text ... VCE=10V,VGE=0V,f=1MHz Vcc = 900v Ic = 100A VGE=15V Rg = 4.7 Tj= 25C Tj=125C Tj= 25C Tj=125C nF s Turn-off time VGE=0V IF = 100A IF = 100A - Forward on voltage V Reverse recovery time Lead resistance, terminal-ch...
Description IGBT MODULE

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    BUW46

SEME-LAB[Seme LAB]
Part No. BUW46
OCR Text ...mal Resistance Junction to Case 900v 450V 7V 15A 30A 10A 175W -65 to 200C 200C 1.0C/W Semelab Plc reserves the right to change test condi...100ma VCE = 900v IC = 0 IC = 10A IC = 7A IC = 10A IC = 7A IC = 10A VCC = 250V IC = 10A VCC = 250V IB...
Description From old datasheet system
NPN SILICON POWER TRANSISTOR

File Size 16.42K  /  2 Page

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    Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
Part No. CZTUX87
OCR Text ...FE fT ts tf TEST CONDITIONS VCE=900v, VBE=1.5V VCE=900v, VBE=1.5V, TA=125C VEB=5.0V IC=30mA IC=100ma, IB=10mA IC=200mA, IB=20mA IC=200mA, IB=20mA VCE=5.0V, IC=40mA VCE=10V, IC=50mA, f=1.0MHz VCC=250V, IC=200mA, IB1=40mA, IB2=80mA VCC=250V, ...
Description Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:8-4
SURFACE MOUNT HIGH VOLTAGE NPN POWER TRANSISTOR

File Size 106.64K  /  2 Page

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    Panasonic
Part No. 2SC4960A
OCR Text ...fT ton tstg tf Conditions VCB = 900v, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC ...100ma 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 0.3 -25C 0.1 0.2 10mA 0 0 2 4 6 8 10 12 ...
Description Silicon NPN triple diffusion planar type(For power switching)

File Size 62.52K  /  4 Page

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