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  800v s Datasheet PDF File

For 800v s Found Datasheets File :: 4530    Search Time::1.5ms    
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    934057062116 934057062126 934057062412 Z0109NA11

NXP Semiconductors
Part No. 934057062116 934057062126 934057062412 Z0109NA11
OCR Text ...itive peak off-state voltage --800v i tsm non-repetitive peak on-state current full sine wave; t j(init) =25c; t p = 20 ms; see figure ...s di t /dt rate of rise of on-state current i t =1a; i g =20ma; di g /dt = 0.1 a/s; t2+ g+ -50a/s i...
Description Logic level four-quadrant triac

File Size 646.22K  /  14 Page

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    ST303C ST303C04HK0L ST303C08HK0L ST303C10HK0L

International Rectifier
Part No. sT303C sT303C04HK0L sT303C08HK0L sT303C10HK0L
OCR Text ... (*) tq = 10 to 20s for 400 to 800v devices tq = 15 to 30s for 1000 to 1200V devices To Order Previous Datasheet sT303C..L series EL...s C 10 / 0.47F 10 / 0.47F 10 / 0.47F On-state Conduction Parameter I T(AV) Max. averag...
Description INVERTER GRADE THYRIsTORs Hockey Puk Version

File Size 432.94K  /  10 Page

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    ST303C1111 ST303C04CHK0L ST303C08CHK0L ST303C10CHK0L

International Rectifier
Part No. sT303C1111 sT303C04CHK0L sT303C08CHK0L sT303C10CHK0L
OCR Text ... (*) tq = 10 to 20s for 400 to 800v devices tq = 15 to 30s for 1000 to 1200V devices To Order Previous Datasheet sT303C..C series EL...s C A 10 / 0.47F 10 / 0.47F 10 / 0.47F On-state Conduction Parameter I T(AV) Max. aver...
Description INVERTER GRADE THYRIsTORs Puk Version

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    MB207L

SeCoS Halbleitertechnologie GmbH
Part No. MB207L
OCR Text 800v ~ 1000v 2.0 amp miniature smd glass passivated bridge rectifiers 08-aug-2011 rev. b page 1 of 3 htt p ://www.secosgmbh.com/ a n y chan g es of s p ecification will not be informed individuall y . z4gp 20kl ???? ? z4gp 20j...
Description Miniature sMD Glass Passivated Bridge Rectifiers

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    Q67040-S4387 Q67040-S4493 IDB18E120 IDP18E120

INFINEON[Infineon Technologies AG]
Part No. Q67040-s4387 Q67040-s4493 IDB18E120 IDP18E120
OCR Text ...tics Reverse recovery time V R=800v, IF=18A, diF/dt=800A/s, Tj =25C V R=800v, IF=18A, diF/dt=800A/s, Tj =125C V R=800v, IF=18A, diF/dt=800A/s, Tj =150C symbol min. t rr I rrm Q rr s - Values typ. max. Unit ns 195 280 300 20.2 2...
Description silicon Power Diodes - 18A EmCon in TO220-2
silicon Power Diodes - 18A EmCon in TO263
Fast switching EmCon Diode

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    CM300HA-28H

Powerex, Inc.
Powerex Power Semiconductors
Part No. CM300HA-28H
OCR Text ...mitter-Collector Voltage* VCC = 800v, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1530 - Max. 1.0 0....s IE = 300A, diE/dt = -600A/s VCC = 800v, IC = 300A VGE1 = VGE2 = 15V, RG = 1.0 VGE = 0V, VCE = 10V,...
Description single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT

File Size 67.32K  /  4 Page

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    STP7NK80Z06 STP7NK80ZFP B7NK80Z B7NK80Z-1 P7NK80Z P7NK80ZFP STB7NK80Z STB7NK80Z-1 STB7NK80ZT4 STP7NK80Z

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. sTP7NK80Z06 sTP7NK80ZFP B7NK80Z B7NK80Z-1 P7NK80Z P7NK80ZFP sTB7NK80Z sTB7NK80Z-1 sTB7NK80ZT4 sTP7NK80Z
OCR Text 800v - 1.5 - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected superMEsHTM Power MOsFET General features Type sTP7NK80Z sTP7NK80ZFP sTB7N...s well established strip-based PowerMEsHTM layout. In addition to pushing on-resistance significantl...
Description N-channel 800v - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected superMEsH?/a> Power MOsFET
N-channel 800v - 1.5- 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected superMEsHPower MOsFET
N-channel 800v - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected superMEsH Power MOsFET
N-channel 800v - 1.5ヘ - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected superMEsH⑩ Power MOsFET

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    SGB07N120 SGB07N12007

Infineon Technologies AG
Part No. sGB07N120 sGB07N12007
OCR Text ...gy e ts t j =25 c, v cc =800v, i c =8a, v ge =15v/0v, r g =47 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and di...s 50 s 15 s t p =5 s f , switching frequency v ce , collector - emitter voltage figur...
Description Fast IGBT in NPT-technology lower Eoff compared to previous generation

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    STP4NC80ZFP STP4NC80Z STB4NC80Z STB4NC80Z-1

STMICROELECTRONICS[STMicroelectronics]
Part No. sTP4NC80ZFP sTP4NC80Z sTB4NC80Z sTB4NC80Z-1
OCR Text 800v - 2.4 - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMEsHTMIII MOsFET TYPE sTP4NC80Z/FP sTB4NC80Z/-1 s s VDss 800v 800v RDs(on) < 2.8 < 2.8 ID 4A 4A 2 1 3 1 2 3 s s s TYPICAL RDs(on) = 2.4 EXTREMELY HIGH dv/d...
Description N沟道800v 2.4ohm - 4A条TO-220/FP/D2PAK/I2PAK齐保护的PowerMEsH⑩三MOsFET
N-CHANNEL 800v - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMEsH⑩III MOsFET
N-CHANNEL 800v - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMEsH?III MOsFET

File Size 541.27K  /  14 Page

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    IRG4PH50UDPBF IRG4PH50UDPBF-15

International Rectifier
Part No. IRG4PH50UDPBF IRG4PH50UDPBF-15
OCR Text ... TJ = 25C -- ns IC = 24A, VCC = 800v 170 VGE = 15V, RG = 5.0 260 Energy losses include "tail" and -- diode reverse recovery. -- mJ see Fig. ...s 1838 TJ = 125C -- A/s TJ = 25C see Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50UDPbF 30 ...
Description &nbsp;&nbsp;&nbsp;INsULATED GATE BIPOLAR TRANsIsTOR WITH ULTRAFAsT sOFT RECOVERY DIODE

File Size 678.24K  /  11 Page

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