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				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	... Pulse Avalanche Energy (mJ) 500 TOP 400 VDS L D R IV E R BOTTOM ID 18A 30A 43A RG VV 2 0GS D .U .T IA S tp + V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S t...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...valanche Energy (mJ) 1 5V 500 VD S L D R IV E R TOP BOTTOM ID 18A 30A 43A 400 RG VGS 20V D .U .T IA S tp 0 .0 1 + - VD D A 300 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 1...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...che Energy (mJ) 1 5V TOP 500 VD S L D R IV E R BOTTOM ID 18A 30A 43A 400 RG VGS 20V D .U .T IA S tp 0 .0 1 + - VD D A 300 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 ...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	... IRF3007 600 15V ID TOP 500 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 400 BOTTOM 20A 34A 48A RG 20V VGS D.U.T IAS tp + V - DD A 300 0.01 Fig 12a. Unclamped Inductive Test Circuit...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...le Pulse Avalanche Energy (mJ) 500 15V 400 ID 25A 44A BOTTOM 62A TOP VDS L D R IV E R RG 20V D .U .T IA S tp 300 + - VD D A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp ...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	...le Pulse Avalanche Energy (mJ) 500 15V 400 VDS L D R IV E R ID 25A 44A BOTTOM 62A TOP RG 20V D .U .T IA S tp 300 + - VD D A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...0V tp 1500 1000 15V 500 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 A 175 I AS Starting TJ , Junction T emperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...amped Inductive Test Circuit 500 0 25 50 75 100 125 150 A 175 I AS Starting TJ , Junction T emperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Curr...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] Motorola, Inc
Part No.	MMBT5551LT1 MMBT5550LT1_D MMBT5550LT1 ON2126
OCR Text	...ata MMBT5550LT1 MMBT5551LT1 500 300 200 h FE, DC CURRENT GAIN 100 - 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V ...5000 3000 2000 tf @ VCC = 30 V 1000 t, TIME (ns) 500 300 200 100 50 0.2 0.3 0.5 ts @ VCC = 120 V tf ...
Description	High Voltage Transistors(NPN Silicon) *Motorola Preferred Device From old datasheet system
File Size	199.67K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	PN2907ARLRA PN2907A-D
OCR Text	...VCE = -10 Vdc) (Note 1.) (IC = -500 mAdc, VCE = -10 Vdc) (Note 1.) Collector-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base-Emitter Saturation Voltage (Note 1.) (IC = -150 mAdc, IB ...
Description	General Purpose Transistor PNP Silicon
File Size	118.61K / 8 Page	View it Online	Download Datasheet

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