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  400v 12a Datasheet PDF File

For 400v 12a Found Datasheets File :: 803    Search Time::1.344ms    
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    SGB04N60 SGU04N60 SGD04N60 SGP04N60

INFINEON[Infineon Technologies AG]
Part No. SGB04N60 SGU04N60 SGD04N60 SGP04N60
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 67) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 60W 12a 50W 10A 40W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION ...
Description IGBTs & DuoPacks - 4A 600V TO 220AB IGBT
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT
Fast IGBT in NPT-technology

File Size 386.47K  /  12 Page

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    IRGP4062DPBF IRGB4062DPBF

International Rectifier
Part No. IRGP4062DPBF IRGB4062DPBF
OCR Text ...s J nC IC = 24A VGE = 15V VCC = 400v Conditions Ref.Fig 24 CT1 IC = 24A, VCC = 400v, VGE = 15V RG = 10, L = 200H, LS = 150nH, TJ = ...12a 12 10 8 6 4 2 0 ICE = 12a ICE = 24A ICE = 48A 15 20 5 10 VGE (V) 15 20 ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 951.36K  /  12 Page

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    NXP Semiconductors N.V.
Part No. BTA312-600CT
OCR Text ...c; see figure 11 -0.81.5v v d =400v; i t = 0.1 a; t j =150c; see figure 11 0.25 - - v i d off-state current v d =600v; t j = 150 c - 0.4 2...12a; dv com /dt = 20 v/s; gate open circuit; "without snubber" condition 8--a/ms v d =400v; t j = ...
Description 3Q Hi-Com Triac BTA312-600CT<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<,;

File Size 127.07K  /  14 Page

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    SGB06N60 SGB06N6006

Infineon Technologies AG
Part No. SGB06N60 SGB06N6006
OCR Text ...gy e ts t j =25 c, v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , l 1) =180nh, c 1) =250pf energy losses include ?tail? and...12a 14a 16a 18a 20a -55c +150c t j =+25c v ce(sat) , collector - emitter saturation voltage ...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 783.52K  /  11 Page

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    IRFP460AS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP460AS
OCR Text ...V, VGS = 0V A --- --- 250 VDS = 400v, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless oth...12a 105 ID = 20A 26 nC VDS = 400v 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 20A ns --...
Description Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)最大值\u003d 0.27ohm,身份证\u003d 20A条)
Power MOSFET(Vdss=500V Rds(on)max=0.27ohm Id=20A)
500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package

File Size 114.44K  /  8 Page

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    SGD04N60

Infineon Technologies AG
Part No. SGD04N60
OCR Text ...g energy e ts t j =25 c, v cc =400v, i c =4a, v ge =0/15v, r g =67 ? , energy losses include ?tail? and diode reverse recovery. - 0.131 0.1...12a t c , case temperature t c , case temperature figure 3. power dissipation as a function of cas...
Description Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 271.27K  /  12 Page

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    APT6025BLL04 APT6025SLL

Advanced Power Technology
Advanced Power Technolo...
Part No. APT6025BLL04 APT6025SLL
OCR Text ...tive switching @ 25c v dd = 400v, v gs = 15v i d = 24a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d ...12a 80 70 60 50 40 30 20 10 0 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 i d = 12a v gs = 10v 0.0175 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 160.24K  /  5 Page

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