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36mh Datasheet PDF File

For 36mh Found Datasheets File :: 48 Search Time::1.39ms
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					Toshiba
Part No.	K4111 2SK4111
OCR Text	...CUIT RG = 25 VDD = 90 V, L = 6.36mh WAVE FORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2008-08-22 2SK4111 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 2...
Description	Search --To 2SK4111 Silicon N-Channel MOS Type
File Size	268.75K / 6 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRL3102S IRL3102STRL IRL3102STRR
OCR Text	...? starting t j = 25c, l = 0.36mh r g = 25 w , i as = 35a. ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC show...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	96.05K / 8 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	K3569
OCR Text	... g = 25 v dd = 90 v, l = 6.36mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as drain-source voltage v ds (v) safe operating area single nonrepetitive pulse tc=25 curves must be derated linearly with inc...
Description	Search --To 2SK3569
File Size	265.31K / 6 Page	View it Online	Download Datasheet

					International Rectifier
Part No.	IRL3102S
OCR Text	...0C Starting TJ = 25C, L = 0.36mh RG = 25W , IAS = 35A. Pulse width 300s; duty cycle 2%. Uses IRL3102 data and test conditions ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and s...
Description	HEXFET? Power MOSFET
File Size	126.03K / 8 Page	View it Online	Download Datasheet

					FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA65N20
OCR Text	...m junction temperature 2. L = 0.36mh, IAS = 65A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 65A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temp...
Description	200V N-Channel MOSFET
File Size	621.78K / 8 Page	View it Online	Download Datasheet

					Fuji Electric
Part No.	FML13N60ES
OCR Text	...4 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t ch =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/s, tch=25c - 0.7 - s reverse recovery charge qrr - ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	391.79K / 5 Page	View it Online	Download Datasheet

					Microsemi Corporation
Part No.	APT25M100J09
OCR Text	... starting at t j = 25c, l = 13.36mh, r g = 2.2 , i as = 18a. 3 pulse test: pulse width < 380s, duty cycle < 2%. 4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . ...
Description	N-Channel MOSFET
File Size	116.05K / 4 Page	View it Online	Download Datasheet

					Fuji Electric
Part No.	FMC13N60ES
OCR Text	...5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t ch =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	483.93K / 5 Page	View it Online	Download Datasheet

					Fuji Electric
Part No.	FMH13N60ES
OCR Text	...5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t ch =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	487.86K / 5 Page	View it Online	Download Datasheet

					Fuji Electric
Part No.	FMI13N60ES
OCR Text	...5 avalanche capability i av l=2.36mh, t ch =25c 13 - - a diode forward on-voltage v sd i f =13a, v gs =0v, t ch =25c - 0.90 1.08 v reverse recovery time trr i f =13a, v gs =0v -di/dt=100a/ s, tch=25c - 0.7 - s reverse recovery charge qrr ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	483.57K / 5 Page	View it Online	Download Datasheet

For 36mh Found Datasheets File :: 48 Search Time::1.39ms
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