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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOD407
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OCR Text |
...ff delaytime v gs =-10v, v ds =-30v, r l =2.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parame...12a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. coppe... |
Description |
P-Channel Enhancement Mode Field
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File Size |
485.05K /
6 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOD603A
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OCR Text |
...di/dt=100a/ m s v gs =0v, v ds =30v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) stat...12a v gs =4.5v, i d =8a v gs =10v, v ds =30v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds... |
Description |
60V Complementary MOSFET
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File Size |
1,003.86K /
11 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOI4102
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OCR Text |
30v n-channel mosfet v ds i d (at v gs =10v) 19a r ds(on) (at v gs =10v) < 37m w r ds(on) (at v gs = 4.5v) < 64m w symbol v ds...12a reverse transfer capacitance i f =12a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching par... |
Description |
30v N-Channel MOSFET
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File Size |
506.09K /
6 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOI444
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OCR Text |
...-off delaytime v gs =10v, v ds =30v, r l =2.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =12a gate source charge gate drain charge total gate charge m ? i s =1a,... |
Description |
60V N-Channel MOSFET
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File Size |
507.81K /
6 Page |
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it Online |
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Alpha & Omega Semiconductors
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Part No. |
AOD444
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OCR Text |
...67 14 0.74 1 12 450 VGS=0V, VDS=30v, f=1MHz VGS=0V, VDS=0V, f=1MHz 61 27 1.35 7.5 VGS=10V, VDS=30v, ID=12a 3.8 1.2 1.9 4.2 VGS=10V, VDS=30v, RL=2.5, RGEN=3 IF=12a, dI/dt=100A/s 3.4 16 2 27.6 30 35 2 10 5 540 85 60 2.4 Min 60 1 5 100 3 Typ M... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
148.63K /
5 Page |
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it Online |
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Price and Availability
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