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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...apacitance(pF) 4000 Ciss 3000 2000 Coss 1000 Crss 0 1 10 100 0 20 40 60 80 100 120 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Sour...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...pacitance (pF) 4000 Ciss 3000 12 8 2000 Coss Crss 1000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typica...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...pacitance (pF) 4000 Ciss 3000 12 8 2000 Coss Crss 1000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typica...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...--- 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590 Max. Units Conditions --- S VDS = 24V, ID = 76A --- ID = 76A --- nC VDS = 24V --- V...4000 2000 8 4 C rss 0 1 10 100 0 0 40 80 120 FOR TEST CIRCUIT SEE FIGURE 13 160 200 2...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...e (V) C, Capacitance (pF) 3000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6 ID = 30A 5 V DS= 24V V DS= 15V V DS= 6V Ciss 4 2000 3 1000 Coss 2 1 0 1 Crss...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...--- --- --- --- 14 59 58 48 7.5 3000 640 330 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.025 VG...4000 3000 V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C o ss = = = = 0V ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... C is s 4000 12 C o ss 3000 8 2000 C rs s 4 1000 0 1 10 100 A 0 0 40 80 FOR TE ST C IR C U IT SE E FIG U R E 1 3 120 160 A 200 -VD S , Drain-to-Source V oltage (V) Q G , Total G ate C harge (...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... C is s 4000 12 C o ss 3000 8 2000 C rs s 4 1000 0 1 10 100 A 0 0 40 80 FOR TE ST C IR C U IT SE E FIG U R E 1 3 120 160 A 200 -VD S , Drain-to-Source V oltage (V) Q G , Total G ate C harge (...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... CGD COSS CDS + CGS 1.05 3000 CISS 2000 COSS 1000 CRSS 0.95 0.85 0.75 -40 0 40 80 120 160 0 0 -10 -20 -30 -40 -50 TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V) F...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-3F6
OCR Text ...t lamps have wavelengths in the 3000-4000 A range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M2732A in approximately 3 years, while it would take approximately 1 week to cause erasure whe...
Description NMOS 32K (4K x 8) UV EPROM, 250ns
From old datasheet system
NMOS 32K 4K x 8 UV EPROM
NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外线擦除EPROM)

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