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  262 144-bit Datasheet PDF File

For 262 144-bit Found Datasheets File :: 1858    Search Time::1.688ms    
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    AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29F400AB-120EI AM29F400AB-120EIB AM29F400AB-120FC AM29F400AB-120FCB AM29

AMD[Advanced Micro Devices]
Part No. AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29F400AB-120EI AM29F400AB-120EIB AM29F400AB-120FC AM29F400AB-120FCB AM29F400AB-120FI AM29F400AB-120FIB AM29F400AB-120SC AM29F400AB-120SCB AM29F400AB-120SI AM29F400AB-120SIB AM29F400AB-150EC AM29F400AB-150ECB AM29F400AB-150EI AM29F400AB-150EIB AM29F400AB-150FC AM29F400AB-150FCB AM29F400AB-150FI AM29F400AB-150FIB AM29F400AB-150SC AM29F400AB-150SCB AM29F400AB-150SI AM29F400AB-150SIB AM29F400AB-65EC AM29F400AB-65ECB AM29F400AB-65EI AM29F400AB-65EIB AM29F400AB-65FC AM29F400AB-65FCB AM29F400AB-65FI AM29F400AB-65FIB AM29F400AB-65SC AM29F400AB-65SCB AM29F400AB-65SI AM29F400AB-65SIB AM29F400AB-70EC AM29F400AB-70ECB AM29F400AB-70EI AM29F400AB-70EIB AM29F400AB-70FC AM29F400AB-70FCB AM29F400AB-70FI AM29F400AB-70FIB AM29F400AB-70SC AM29F400AB-70SCB AM29F400AB-70SI AM29F400AB-70SIB AM29F400AB-90EC AM29F400AB-90ECB AM29F400AB-90EI AM29F400AB-90EIB AM29F400AB-90FC AM29F400AB-90FCB AM29F400AB-90FI AM29F400AB-90FIB AM29F400AB-90SC AM29F400AB-90SCB AM29F400AB-90SI AM29F400AB-90SIB AM29F400AT AM29F400AT-120EC AM29F400AT-120ECB AM29F400AT-120EI AM29F400AT-120EIB AM29F400AT-120FC AM29F400AT-120FCB AM29F400AT-120FI AM29F400AT-120FIB AM29F400AT-120SC AM29F40
OCR Text 262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V 10% for read and write operations -- Minimizes system level power requirements s Compatible with JEDEC-standards -- Pinout and software c...
Description 4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

File Size 136.58K  /  35 Page

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    IDT71256 IDT71256L IDT71256L100D IDT71256L100DB IDT71256L100L IDT71256L100LB IDT71256L100P IDT71256L100PB IDT71256L100TD

INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
Part No. IDT71256 IDT71256L IDT71256L100D IDT71256L100DB IDT71256L100L IDT71256L100LB IDT71256L100P IDT71256L100PB IDT71256L100TD IDT71256L100TDB IDT71256L100Y IDT71256L100YB IDT71256L120D IDT71256L120DB IDT71256L120L IDT71256L120LB IDT71256L120P IDT71256L120PB IDT71256L120TD IDT71256L120TDB IDT71256L120Y IDT71256L120YB IDT71256L150D IDT71256L150DB IDT71256L150L IDT71256L150LB IDT71256L150P IDT71256L150PB IDT71256L150TD IDT71256L150TDB IDT71256L150Y IDT71256L150YB IDT71256L20D IDT71256L20DB IDT71256L20L IDT71256L20LB IDT71256L20P IDT71256L20PB IDT71256L20TD IDT71256L20TDB IDT71256L20Y IDT71256L20YB IDT71256L25D IDT71256L25DB IDT71256L25L IDT71256L25LB IDT71256L25P IDT71256L25PB IDT71256L25TD IDT71256L25TDB IDT71256L25Y IDT71256L25YB IDT71256L30D IDT71256L30DB IDT71256L30L IDT71256L30LB IDT71256L30P IDT71256L30PB IDT71256L30TD IDT71256L30TDB IDT71256L30Y IDT71256L30YB IDT71256L35D IDT71256L35DB IDT71256L35L IDT71256L35LB IDT71256L35P IDT71256L35PB IDT71256L35TD IDT71256L35TDB IDT71256L35Y IDT71256L35YB IDT71256L45D IDT71256L45DB IDT71256L45L IDT71256L45LB IDT71256L45P IDT71256L45PB IDT71256L45TD IDT71256L45TDB IDT71256L45Y IDT71256L45YB IDT71256L55D IDT71256L55DB IDT71256L55L IDT71256L55LB I
OCR Text ...DESCRIPTION: The IDT71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's highperformance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power consumptio...
Description Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位)
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位)
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )

File Size 78.26K  /  9 Page

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    IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
Part No. IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL-10LQI IS61LV25616AL-10T IS61LV25616AL-10TI IS61LV25616AL-12B IS61LV25616AL-12K IS61LV25616AL-12KI IS61LV25616AL-12T IS61LV25616AL-12TI 61LV25616AL
OCR Text ...04-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power ...
Description 20 AMP MINIATURE PC BOARD RELAY
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44

File Size 64.23K  /  12 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text ...ESCRIPTION The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address acce...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

File Size 166.89K  /  8 Page

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ...ESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address acce...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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    KM23C4100DET KM23C4100DT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
http://
Part No. KM23C4100DET KM23C4100DT
OCR Text 262,144 x 16(word mode) * Fast access time : 80ns(Max.) * Supply voltage : single +5V * Current consumption Operating : 50mA(Max.) Standby : 50A(Max.) * Fully static operation * All inputs and outputs TTL compatible * Three state outputs * ...
Description 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM

File Size 71.59K  /  4 Page

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    LC372100PM LC372100PM-10LV LC372100PM-20LV LC372100PP LC372100PP-10LV LC372100PP-20LV LC372100PT LC372100PT-10LV LC37210

Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LC372100PM LC372100PM-10LV LC372100PM-20LV LC372100PP LC372100PP-10LV LC372100PP-20LV LC372100PT LC372100PT-10LV LC372100PT-20LV
OCR Text ..., LC372100PM and LC372100PT are 262,144-word x 8-bit organization (2,097,152-bit) mask programmable read only memories. The LC372100PP-10, LC372100PM-10 and LC372100PT-10 feature an access time of 100 ns, an OE access time of 40 ns, and a s...
Description CAP 10UF 16V 10% TANT SMD-6032-28 TR 2迈可262144字8位)掩模ROM内部时钟硅门
CAP 10UF 16V 10% TANT SMD-6032-28 TR-13 2迈可262144字8位)掩模ROM内部时钟硅门
CAP 10UF 16V 20% TANT SMD-3528-21 TR-13 2迈可262144字8位)掩模ROM内部时钟硅门
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

File Size 77.94K  /  5 Page

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    LP62S16256E-I LP62S16256EU-55LLI LP62S16256EU-70LLI LP62S16256EV-55LLI LP62S16256EV-70LLI

AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP62S16256E-I LP62S16256EU-55LLI LP62S16256EU-70LLI LP62S16256EV-55LLI LP62S16256EV-70LLI
OCR Text ...ndom access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct int...
Description 256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

File Size 165.09K  /  15 Page

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    LP62S16256E-T LP62S16256EU-55LLT LP62S16256EU-70LLT LP62S16256EV-55LLT LP62S16256EV-70LLT

AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP62S16256E-T LP62S16256EU-55LLT LP62S16256EU-70LLT LP62S16256EV-55LLT LP62S16256EV-70LLT
OCR Text ...ndom access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct int...
Description 256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

File Size 165.07K  /  15 Page

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    LP62S16256F-T LP62S16256FU-70LLT LP62S16256FV-70LLT

AMIC Technology, Corp.
AMICC[AMIC Technology]
Part No. LP62S16256F-T LP62S16256FU-70LLT LP62S16256FV-70LLT
OCR Text ...ndom access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct int...
Description 256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

File Size 157.80K  /  14 Page

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