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  22900 Datasheet PDF File

For 22900 Found Datasheets File :: 27    Search Time::1ms    
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    STRH100N6

STMicroelectronics
Part No. STRH100N6
OCR Text ...ion done according to the escc 22900 specification, window 1.) using the to-3 package. both pre-irradiation and post-irradiation performance are tested and specified using the same circuitry and test conditions in order to provide a dire...
Description Rad-Hard N-channel, 60 V, 80 A Power MOSFET

File Size 384.61K  /  18 Page

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    STRH40N6

STMicroelectronics
Part No. STRH40N6
OCR Text ...tion done according to the escc 22900 specification, window 1) using the to-3 package. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a dire...
Description Rad-Hard N-channel 60 V, 30 A Power MOSFET

File Size 419.13K  /  16 Page

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    STRH40P10

STMicroelectronics
Part No. STRH40P10
OCR Text ...tion done according to the escc 22900 specification, window 1) using the to-3 package. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a dire...
Description Rad-Hard P-channel 100 V, 34 A Power MOSFET

File Size 379.91K  /  18 Page

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    STRH8N10

STMicroelectronics
Part No. STRH8N10
OCR Text ...ng dose, according to the escc 22900 specification window 1, using the to-39 package. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a dire...
Description Rad-Hard N-channel 100 V, 6 A Power MOSFET

File Size 476.95K  /  18 Page

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    UPD166017T1F UPD166017T1F-E1-AY

Renesas Electronics Corporation
Part No. UPD166017T1F UPD166017T1F-E1-AY
OCR Text ...24100 t ch = ?40c 15100 18800 22900 t ch = 25c 16300 19000 22500 t ch = 150c i l = 10 a 10100 19000 34400 t ch = ?40c 12200 19000 28200 t ch = 25c current sense ratio k ilis 14400 19000 23500 t ch = 150c i l = 4.0 a sen...
Description INTELLIGENT POWER DEVICE
   INTELLIGENT POWER DEVICE

File Size 189.80K  /  24 Page

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    STRH40N25FSY1 STRH40N25FSY3 RH40N25FSY3 RH40N25FSY1

STMICROELECTRONICS[STMicroelectronics]
Part No. STRH40N25FSY1 STRH40N25FSY3 RH40N25FSY3 RH40N25FSY1
OCR Text ...1 V a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec. 5/13 Electrical characteristics STRH40N25FSY3 Table 9. Ion Kr Xe Single event effect, SOA(1) Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV...
Description N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET

File Size 211.24K  /  13 Page

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    D5810N

Infineon Technologies AG
Part No. D5810N
OCR Text ...48 0,000843 0,005420 0,057200 0,22900 1,13000 - r thn [c/w] 0,000049 0,001061 0,00118 0,00679 0,00442 0,0185 - anodenseitig anode-sided n [s] 0,000049 0,000969 0,01070 0,16900 2,79000 6,1100...
Description Netz-Gleichrichterdiode Rectifier Diode

File Size 237.11K  /  8 Page

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