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5922A SB151 MA195 IMP528D 90TP07 ATS01 1105K 7290A
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    SPB160N04S2L-03

INFINEON[Infineon Technologies AG]
Part No. SPB160N04S2L-03
OCR Text ...esistance V GS=10V, I D=80A 1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 243A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s...
Description Low Voltage MOSFETs - TO263;160A;LL
OptiMOS Power-Transistor

File Size 296.79K  /  8 Page

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    KB817C KB817CD KB817 KB817AB KB817AC KB817AD KB817B KB817BD KB817A KB817BC KB817D KB817L

Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
Kingbright, Corp.
Part No. KB817C KB817CD KB817 KB817AB KB817AC KB817AD KB817B KB817BD KB817A KB817BC KB817D KB817L
OCR Text ...Output Collector dark current *1current Symbol VF VFM IR ICEO CTR VCE(sat) fc Conditions I F=20mA I FM=0.5A VR=4V VCE =20V,I F=0mA I F=5mA,VCE=5V I F=20mA, I C=1mA VCE=5V, IC=2mA RL=100,-3dB VCE=2V, IC=2mA RL=100 Min. ___ ___ ___ ...
Description High Isolation Voltage Photocoupler
GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER

File Size 210.16K  /  8 Page

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    SPB80P06P SPP80P06P

INFINEON[Infineon Technologies AG]
Part No. SPB80P06P SPP80P06P
OCR Text ...matic category; DIN IEC 68-1 1current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry I = -91A D Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junct...
Description SIPMOS Power-Transistor SIPMOS功率晶体
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 23m

File Size 95.24K  /  9 Page

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    SIEMENS AG
Infineon
Part No. SPB46N03 SPP46N03 P46N03
OCR Text ...matic category; DIN IEC 68-1 1current limited by bond wire 1 06 / 1998 Semiconductor Group Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistanc...
Description SIPMOS-TM POWER TRANSISTOR 46 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
From old datasheet system
SIPMOS Power Transistor

File Size 87.63K  /  9 Page

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    Infineon
Part No. SPU30N03 SPD30N03
OCR Text ...matic category; DIN IEC 68-1 1current limited by bond wire 1 06 / 1998 Semiconductor Group Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistanc...
Description SIPMOS ? Power Transistor
From old datasheet system

File Size 94.63K  /  9 Page

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    BTS282Z BTS282-Z BTS282ZSMS

INFINEON[Infineon Technologies AG]
Part No. BTS282Z BTS282-Z BTS282ZSMS
OCR Text ...matic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175C 2 2000-09-11 ID = 36 A, RGS = 25 VGS = 4.5 V, VDS 0.5 V, TC = 85 C ID ID puls EAS Ptot Tj T...
Description Temperature Protected Switch
Transient Voltage Suppressor Diodes
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)
Smart Low Side Switches - N-Channel Speed TEMPFET

File Size 267.96K  /  12 Page

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    SPB100N08S2-07 SPP100N08S2-07

INFINEON[Infineon Technologies AG]
Part No. SPB100N08S2-07 SPP100N08S2-07
OCR Text ...GS=10V, I D=66A, SMD version 1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 133A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s...
Description Low Voltage MOSFETs - TO220/263; 100 A; 75V; NL; 7.1 mOhm
OptiMOS Power-Transistor

File Size 308.86K  /  8 Page

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    SPP80N08S2-07 SPI80N08S2-07 SPB80N08S2-07

INFINEON[Infineon Technologies AG]
Part No. SPP80N08S2-07 SPI80N08S2-07 SPB80N08S2-07
OCR Text ...V GS=10, ID=66A, SMD version 1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 132A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s...
Description Low Voltage MOSFETs - TO220/263; 80 A; 75V; NL; 7,4 mOhm
OptiMOS Power-Transistor

File Size 422.05K  /  8 Page

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    SPP80N08S2L-07 SPB80N08S2L-07

INFINEON[Infineon Technologies AG]
Part No. SPP80N08S2L-07 SPB80N08S2L-07
OCR Text ...GS=10V, I D=67A, SMD version 1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 135A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s...
Description Low Voltage MOSFETs - TO220/263; 80 A; 75V; LL; 7,1 mOhm
OptiMOS Power-Transistor

File Size 309.63K  /  8 Page

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    BTS244Z BTS244-Z

Infineon Technologies AG
Part No. BTS244Z BTS244-Z
OCR Text ...matic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175C 2 2000-05-17 ID = 19 A, RGS = 25 VGS = 4.5 V, VDS 0.5 V, TC = 85 C ID ID puls EAS Ptot Tj T...
Description Transient Voltage Suppressor Diodes
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)

File Size 271.27K  /  12 Page

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