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Electronic Concepts, Inc.
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| Part No. |
MP88BG684K MP88BG684J MP88BG684M
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| OCR Text |
...800 400 0.0024 32.2 26.8 16.5 1932 8782 <15 2739 1 pt88bg274- 0.27 800 400 0.0022 33.7 28.0 17.2 2134 7904 <15 2472 1 pt88bg334- 0.33 800 400 0.0020 34.9 29.0 17.8 2319 7026 <15 2236 1 pt88bg394- 0.39 800 400 0.0023 41.6 34.6 21.3 2... |
| Description |
CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 800 V, 0.68 uF, CHASSIS MOUNT
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| File Size |
964.62K /
6 Page |
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Freescale (Motorola)
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| Part No. |
MRF5S19130R3 MRF5S19130SR3
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| OCR Text |
...= 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 12 13 ? db drain efficiency (v dd = 28 vdc, p out = 26 w avg, i dq = 1200 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) 23 25 ... |
| Description |
1990 MHz, 26 W AVG., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
589.26K /
12 Page |
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it Online |
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Freescale (Motorola)
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| Part No. |
MRF5S19100L MRF5S19100LR3 MRF5S19100LSR3
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| OCR Text |
...= 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12.5 13.9 ? db drain efficiency (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) 24 ... |
| Description |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
799.79K /
12 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
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| Part No. |
MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3
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| OCR Text |
... = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 13.5 14.5 ? db drain efficiency (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) 24 2... |
| Description |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
586.50K /
12 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor
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| Part No. |
AGR19180EF
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| OCR Text |
... = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) -- 26 -- % Drain Efficiency (VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA, IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990... |
| Description |
180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
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| File Size |
387.31K /
9 Page |
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it Online |
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