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  12a-peak Datasheet PDF File

For 12a-peak Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NTE[NTE Electronics]
Part No. NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NTE5880
Description Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.

File Size 23.18K  /  2 Page

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    Stackpole Electronics, Inc.
Part No. PR103W PR103K PR134K PR101W PR114K PR105KW PR125K PR105W PR102W PR114W PR115K PR115KW PR145K
Description THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|800V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|400V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|12A I(T) 可控硅模块|交流开关| 1.2KV五(无线资源管理)| 12A条疙(T

File Size 257.05K  /  6 Page

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    MG600Q1US41 E002366

Toshiba Corporation
Toshiba Semiconductor
Part No. MG600Q1US41 E002366
Description Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

File Size 287.24K  /  6 Page

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    Q62702-B257 BBY34D Q62702-B194 BBY34C

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-B257 BBY34D Q62702-B194 BBY34C
Description Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管(Hyperabrupt交界调谐二极管频率线性调谐范 12五)
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)

File Size 20.70K  /  2 Page

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    1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N3673A JANTXV1N3673A 1N1204A 1N1206A 1N3671A 1N3671RA 1N3673RA JAN1N1204A

MICROSEMI[Microsemi Corporation]
http://
Part No. 1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N3673A JANTXV1N3673A 1N1204A 1N1206A 1N3671A 1N3671RA 1N3673RA JAN1N1204A JAN1N1206A JAN1N3671A JAN1N3673A JANTX1N1202A JANTX1N1204A JANTX1N1206A JANTX1N3671A JANTX1N3673A JANTXV1N1202A JANTXV1N1204A JANTXV1N1206A JANTXV1N3671A JAN1N3673RA JANTX1NV3673RA JANTX1N3673RA JAN1N1204RA JAN1N1202RA JAN1N1206RA JANTX1NV1204A JANTX1NV1206A JANTX1NV1206RA JANTX1NV1204RA JANTX1NV1202RA JANTX1NV1202A JAN1N3671RA JANTX1NV3671A
Description 12A silicon power rectifier, 200V
12A silicon power rectifier, 1000V
Military Silicon Power Rectifier
12A silicon power rectifier, 400V
12A silicon power rectifier, 600V
12A silicon power rectifier, 800V

File Size 105.87K  /  2 Page

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    2SD1047 2SD1047E

Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
Part No. 2SD1047 2SD1047E
Description TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-247VAR 晶体管|晶体管| npn型| 140伏特五(巴西)总裁| 12A条一(c)|47VAR
POWER TRANSISTORS(12A/140V/100W)
POWER TRANSISTORS(12A,140V,100W)

File Size 129.75K  /  3 Page

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Part No. STK16C68-W45I STK16C68-W25I
Description SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA

File Size 98.17K  /  10 Page

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    HGT1S2N120BNS9A HGTD2N120BNS HGT1S2N120BNS HGTP2N120BN

Fairchild Semiconductor
Part No. HGT1S2N120BNS9A HGTD2N120BNS HGT1S2N120BNS HGTP2N120BN
Description 12A, 1200V, NPT Series N-Channel IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB

File Size 132.11K  /  8 Page

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    2SB826 2SB826R

MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
Part No. 2SB826 2SB826R
Description TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB
POWER TRANSISTORS(12A,50V,40W)

File Size 121.08K  /  3 Page

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    2SB922L 2SD1238L 2SD1238LR 2SB922LS

SANYO[Sanyo Semicon Device]
Part No. 2SB922L 2SD1238L 2SD1238LR 2SB922LS
Description Dual/Triple-Voltage µP Supervisory Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C)
80V/12A Switching Applications

File Size 94.22K  /  3 Page

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