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    Mitsubishi Electric Corporation
Part No. FK14SM-9
OCR Text ...ching use 40 32 24 16 8 0 0 4 8 12 16 20 i d = 20a t c = 25? pulse test 14a 7a 40 32 24 16 8 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse...9 high-speed switching use 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 5 3 2 23 5710 1 23 5710 0 23 cis...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 63.71K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. FK10UM-9
OCR Text ... 10.5max. 4.5 1.3 f 3.6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 qwe q gate w drain e source r drain r wr q e fe...9 high-speed switching use v v m a ma v w v s pf pf pf ns ns ns ns v c/w ns 450 30 2 3.3 ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 62.45K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. FK10SM-9
OCR Text ...ching use 40 32 24 16 8 0 0 4 8 12 16 20 i d = 15a t c = 25? pulse test 10a 5a 10 1 7 5 3 2 10 ? 10 ? 23 5710 0 10 0 7 5 3 2 23 5710 1 t c...9 high-speed switching use 5.0 4.0 3.0 2.0 1.0 0 ?0 0 50 100 150 v ds = 10v i d = 1ma 20 16 12 8 4...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 63.79K  /  5 Page

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    Central Technologies / CT Magnetics
Part No. KM718V787AT-9
OCR Text ...-9 unit cycle time t cyc 8.5 10 12 ns clock access time t cd 7.5 8 9 ns output enable access time t oe 3.5 3.5 3.5 ns km718v787a 128kx18 synchronous sram - 3 - rev 3.0 december 1998 pin configuration (top view) 1 2 3 4 5 6 7 8 9 10 11 12...
Description 128K X 18 CACHE SRAM, 9 ns, PQFP100 14 X 20 MM, TQFP-100

File Size 470.22K  /  16 Page

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    Central Technologies / CT Magnetics
Part No. KM718V087H-9
OCR Text ...-10 unit cycle time t cyc 10 10 12 ns clock access time t cd 8.5 9.0 10.0 ns output enable access time t oe 4.0 4.0 4.0 ns output buffer km718v087 512kx36 & 1mx18 synchronous sram - 3 - rev 1.0 december 1999 km736v987 pin configuration (t...
Description 1M X 18 CACHE SRAM, 9 ns, PBGA119 BGA-119

File Size 575.35K  /  21 Page

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    Central Technologies / CT Magnetics
Part No. KM718V047H-9
OCR Text ...-10 unit cycle time t cyc 10 10 12 ns clock access time t cd 8.5 9.0 10.0 ns output enable access time t oe 4.0 4.0 4.0 ns n t ram tm and no turnaround random access memory are trademarks of samsung. we bw x clk cke cs 1 cs 2 cs 2 adv oe z...
Description 1M X 18 ZBT SRAM, 9 ns, PBGA119 BGA-119

File Size 458.97K  /  20 Page

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    FS5VS-9

Mitsubishi Electric Semiconductor
Part No. FS5VS-9
OCR Text ...- -- -- -- 3 1.1 2.2 3.0 600 80 12 15 15 60 30 1.5 -- Max. -- -- 10 1 4 1.4 2.8 -- -- -- -- -- -- -- -- 2.0 1.39 Unit V V A mA V V S pF ...9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-...
Description HIGH-SPEED SWITCHING USE

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    HFA7-0005-9 HFA3-0005-5 HFA3-0005-9 HFA7-0005-5 HFA9P0005-5 HFA2-0005-5 HFA2-0005-9 HFA-0005

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HFA7-0005-9 HFA3-0005-5 HFA3-0005-9 HFA7-0005-5 HFA9P0005-5 HFA2-0005-5 HFA2-0005-9 HFA-0005
OCR Text ...NITS 3 - 6 11 100 15 20 6 12 10 2 15 45 50 50 25 50 - 3 - 6 11 100 15 20 6 12 10 2 30 35 100 100 50 50 - mV mV V/oC A A...9. See Thermal Constants in "Applications Information" section. Maximum power dissipation, including...
Description High Slew Rate Operational Amplifier OP-AMP, 35000 uV OFFSET-MAX, 300 MHz BAND WIDTH, CDIP8

File Size 656.54K  /  10 Page

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    FK10KM-9

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK10KM-9
OCR Text ... 5V 6 TC = 25C Pulse Test 12 8 4 4 4V 0 0 10 20 30 40 50 2 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SO...9 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 ...
Description HIGH-SPEED SWITCHING USE

File Size 53.08K  /  5 Page

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