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  114.1mhz Datasheet PDF File

For 114.1mhz Found Datasheets File :: 3323    Search Time::2.343ms    
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    LA1175 LA1175M HOMESTEREOAPPLICATIONS

SANYO[Sanyo Semicon Device]
Part No. LA1175 LA1175M HOMESTEREOAPPLICATIONS
OCR Text ...2 330 0.25 1.6 102 100 88 87 74 114 113 109 6.0 8.0 0.7 400 0.5 2.1 105 103 95 94 81 max 33.0 Unit mA V V V V dB dB dB dB dB dB dB dB mA ...1MHz, fm=400Hz 100% mod Desired signal fU1 : 97.9MHz non-mod SG open 132dB fU2 : 96.7MHz fm=1kHz 100...
Description (778.00 k)
FM Front End For Car Radio, Home Stereo Applications
Monolithic Linear IC

File Size 776.63K  /  14 Page

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    Z8E001

ZILOG[Zilog, Inc.]
Part No. Z8E001
OCR Text ...0.9 1.4 10.0 10.0 0.064 0.064 0.114 0.114 Units Conditions V V V V V V V V V V V V V V V V V V mV mV A A A A V V -30 -100 2.0 4.0 1.0 1.0 A A mA mA mA mA @ 10 MHz @ 10 MHz HALT Mode VIN = 0V,VCC @ 10 MHz HALT Mode VIN = 0V,VCC @ 10 MHz 4,5 ...
Description CMOS OTP Microcontroller

File Size 209.49K  /  49 Page

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    BUZ104L C67078-S1358-A2 BUZ104LE3046

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUZ104L C67078-S1358-A2 BUZ104LE3046
OCR Text ....5 A, VDD = 25 V, RGS = 25 L = 114 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate ...1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 ...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管(N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor

File Size 210.09K  /  9 Page

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    BUZ104 C67078-S1353-A2 BUZ104E3045 BUZ104E3045A BUZ104E3046 BUZ104E3111

SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BUZ104 C67078-S1353-A2 BUZ104E3045 BUZ104E3045A BUZ104E3046 BUZ104E3111
OCR Text ....5 A, VDD = 25 V, RGS = 25 L = 114 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate ...1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 ...
Description N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

File Size 208.39K  /  9 Page

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    BYW99W200 BYW99P200 BYW99P-200 BYW99 BYW99P BYW99PI BYW99PI200 BYW99W BYW99W-200 BYW99PI-200

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
SGS Thomson Microelectronics
Part No. BYW99W200 BYW99P200 BYW99P-200 BYW99 BYW99P BYW99PI BYW99PI200 BYW99W BYW99W-200 BYW99PI-200
OCR Text ...0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.213 0.222 0.134 0.144 0.161 0.164 0.047 0.055 0.181 typ BYW99P/PI/W PACKAGE MECHANICAL DATA TO247 V REF. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G...
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
Sound/Security Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:18; No. Strands x Strand Size:7 x 26; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Capacitance:42pF/ft RoHS Compliant: Yes 高效快速恢复整流二极管
Sound/Security Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:18; No. Strands x Strand Size:7 x 26; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Capacitance:70pF/ft RoHS Compliant: Yes 高效快速恢复整流二极管

File Size 77.18K  /  6 Page

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    FDW2507NZ FDW2507NZNL FDW2507NZQ

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2507NZ FDW2507NZNL FDW2507NZQ
OCR Text ...ient (Note 1a) (Note 1b) 77 114 C/W C/W Package Marking and Ordering Information Device Marking 2507NZ Device FDW2507NZ Reel Size...1MHz VGS = 0 V 2 1 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURR...
Description Common Drain N-Channel 2.5V specified PowerTrench MOSFET

File Size 127.22K  /  5 Page

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    FDW2507N

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2507N
OCR Text ...ient (Note 1a) (Note 1b) 77 114 C/W C/W Package Marking and Ordering Information Device Marking 2507N Device FDW2507N Ree...1MHz VGS = 0 V 2 1 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURR...
Description Common Drain N-Channel 2.5V specified PowerTrench MOSFET

File Size 126.67K  /  5 Page

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    FDW2509 FDW2509NZ

Fairchild Semiconductor
Part No. FDW2509 FDW2509NZ
OCR Text ...ient (Note 1a) (Note 1b) 77 114 C/W Package Marking and Ordering Information Device Marking 2509NZ 2003 Fairchild Semiconductor ...1MHz VGS = 0 V 1500 CISS 1000 COSS 500 CRSS 2 1 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0 4...
Description Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

File Size 120.10K  /  5 Page

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    ILX516K

SONY[Sony Corporation]
Part No. ILX516K
OCR Text ...xels are divided into blocks of 114. The maximum output of each block is set to VMAX, the minimum output to VMIN and the average output to V...1MHz. -6- Application Circuit 5.1k VOUT-B IC1 Tr1 100 2 5.1k 2 ROG-B ROG-G V...
Description 3648 X 3pixel CCD Linear Sensor (Color)

File Size 130.22K  /  11 Page

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For 114.1mhz Found Datasheets File :: 3323    Search Time::2.343ms    
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